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Projects/Programs: Grand Challenge 2: Advanced Metrology for Future Microelectronics Manufacturing

Displaying 1 - 10 of 10
Diagram of In-Situ AFM During Resist Development

Advanced Metrology to Enable Next Generation EUV Photoresists

Ongoing
EUV (extreme ultraviolet) lithography, the technology that “saved Moore’s Law,” is widely regarded as the future of cutting-edge nanofabrication. It was developed in the United States and U.S. companies in many parts of the EUV ecosystem have established dominance in the field that must be defended
Advancing Power Electronics with Defect Metrology, Key challenges of near market devices of

Advancing Power Electronics with Defect Metrology

Ongoing
Power electronics play a central role in all aspects of electrical energy storage, distribution, conversion, and consumption. Currently, power electronics heavily rely on Si-based insulated-gate bipolar transistors (IGBT), which have large footprints, are inefficient, and require extensive cooling
Blue rectangle with green line through it. Electron Solid Interaction Illustration.

Electron-Solid Interactions

Ongoing
A measuring instrument produces a signal that depends upon the value of the measurand. The value and its uncertainty are inferred from the signal by using a model of their relationship. Erroneous models lead to erroneous inference. The accuracy of SEM (scanning electron microscopy) is limited by
Harnessing EUV capabilities for non-destructive metrology

EUV Scatterometry

Ongoing
To measure and inspect the smallest printed features on an IC chip, researchers and manufacturers use a combination of electron scanning modalities (i.e., transmission electron and scanning electron microscopies) and an optical method, scatterometry. Industrially, the most common modality for
eight boxes with different graphs

Mapping of Thermal Properties at the Nanoscale

Ongoing
Continuous advances in the performance and functionality of semiconductor devices have been driven by scale reduction, incorporation of new and nanomaterials, and by heterogeneous integration (HI). However, such scaling and integrated architecture has rendered existing thermal metrology inadequate
Images depicting an advanced analysis of HR-EBSD data

Strain Measurement for Semiconductor Devices and Packages

Ongoing
Strain is a critical parameter that influences both electrical and mechanical failures of devices, however, measuring strain in complex 3D geometries and vanishingly small feature sizes remains a challenge for manufacturers. Data provided by strain measurements can be used to validate computational