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Publications

Search Publications by

Albert F. Rigosi (Fed)

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Displaying 1 - 25 of 60

Influence of Dimensionality on the Charge Density Wave Phase of 2H-TaSe2

March 23, 2022
Author(s)
Sugata Chowdhury, Albert Rigosi, Heather Hill, David B. Newell, Angela R. Hight Walker, Francesca Tavazza, Andrew Briggs
Metallic transition metal dichalcogenides like tantalum diselenide (TaSe2) exhibit exciting behaviors at low temperatures including the emergence of charge density wave (CDW) states. In this work, density functional theory (DFT) is used to classify the

Geometric interference in a high-mobility graphene annulus p-n junction device

January 10, 2022
Author(s)
Son Le, Albert Rigosi, Joseph Hagmann, Christopher Gutierrez, Ji Ung Lee, Curt A. Richter
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the

Graphene Quantum Hall Effect Parallel Resistance Arrays

February 2, 2021
Author(s)
Alireza Panna, I Fan Hu, Mattias Kruskopf, Dinesh K. Patel, Dean G. Jarrett, Chieh-I Liu, Shamith Payagala, Dipanjan Saha, Albert Rigosi, David B. Newell, Chi-Te Liang, Randolph Elmquist
As first recognized in 2010, epitaxial graphene on SiC(0001) provides a platform for quantized Hall resistance (QHR) metrology unmatched by other 2D structures and materials. Here we report graphene parallel QHR arrays, with metrologically precise

AC and DC Quantized Hall Array Resistance Standards

August 28, 2020
Author(s)
Randolph E. Elmquist, Mattias Kruskopf, Dinesh K. Patel, I Fan Hu, Chieh-I Liu, Albert F. Rigosi, Alireza R. Panna, Shamith U. Payagala, Dean G. Jarrett
Quantized Hall array resistance standards (QHARS) span values from 100 (ohm) to 1 M(ohm) and demonstrate precision approaching that of single devices. This paper focuses on QHARS having values near 1 k(ohm) for increased sensitivity using room-temperature

Graphene quantum Hall effect devices for AC and DC resistance metrology

August 28, 2020
Author(s)
Mattias Kruskopf, Dinesh K. Patel, Chieh-I Liu, Albert Rigosi, Randolph Elmquist, Yicheng Wang, Stefan Bauer, Yefei Yin, Klaus Pierz, Eckard Pesel, Martin Goetz, Jurgen Schurr
The frequency dependence of the quantized Hall resistance at alternating current results from capacitive losses inside the sample as well as between the sample and external parts. In this joint effort we report on ac quantum Hall measurements of a graphene