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Search Publications by: Berc Kalanyan (Fed)

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Displaying 1 - 9 of 9

Rapid Wafer-Scale Growth of Polycrystalline 2H-MoS2 by Pulsed Metalorganic Chemical Vapor Deposition

July 12, 2017
Author(s)
Berc Kalanyan, William A. Kimes, Ryan Beams, Stephan J. Stranick, Elias J. Garratt, Irina Kalish, Albert Davydov, Ravindra Kanjolia, James E. Maslar
High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely

Identification of the Crystal Symmetry in 1T' MoTe2 with Polarization-Resolved Second Harmonic Generation and Raman Scattering

October 13, 2016
Author(s)
Ryan Beams, Luiz Gustavo Cancado, Sergiy Krylyuk, Irina Kalish, Berc Kalanyan, Arunima Singh, Kamal Choudhary, Patrick Vora, Francesca M. Tavazza, Albert Davydov, Stephan J. Stranick
We study the crystal symmetry properties of few-layer 1T' MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T' MoTe2 is know to be inversion symmetric, however, we nd that the inversion symmetry is

Vertical 2D/3D Semiconductor Heterostructures based on Epitaxial Molybdenum Disulfide and Gallium Nitride

February 19, 2016
Author(s)
Dmitry A. Ruzmetov, Kehao Zhang, Gheorghe Stan, Berc Kalanyan, Ganesh R. Bhimanapati, Sarah M. Eichfeld, R A. Burke, Pankaj B. Shah, Terrance P. O'Regan, Frank J. Crowne, A. Glen Birdwell, Joshua A. Robinson, Albert Davydov, Tony G. Ivanov
When designing semiconductor heterostructures, it is expected that epitaxial alignment will facilitate low-defect interfaces and efficient vertical transport. Here, we report lattice-matched epitaxial growth of molybdenum disulfide (MoSub2) directly on