Atomic layer deposition of MoS2 films using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol

Published

December 31, 2018

Author(s)

Berc Kalanyan, Ryan Beams, Michael B. Katz, Albert Davydov, James E. Maslar, Ravindra Kanjolia

Abstract

Proposed commercial applications using transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few- layer thickness regimes. Therefore, production methods that lend themselves to scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. We have developed a new thermal atomic layer deposition (ALD) process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS2-containing amorphous films. We observe self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycling, with growth per cycle values of ≈0.1 nm/cycle. As- deposited films are smooth and contain nitrogen and carbon impurities attributed to poor ligand elimination from the Mo source. Upon high-temperature annealing, a large portion of the impurities are removed and we obtain few-layer crystalline 2H-MoS2 films.

Citation

Journal of Vacuum Science & Technology A

Pub Type

Journals

Keywords

MoS2, atomic layer deposition, ALD, transition metal dichalcogenides, metalorganic chemistry, nanomanufacturing

Citation

Kalanyan, B. , Beams, R. , Katz, M. , Davydov, A. , Maslar, J. and Kanjolia, R. (2018), Atomic layer deposition of MoS2 films using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol, Journal of Vacuum Science & Technology A (Accessed April 19, 2024)