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Evaluation of silicon wafer-based internal reflection elements for use with in situ FT-IR spectroscopy

Published

Author(s)

Brent A. Sperling, Berc Kalanyan

Abstract

Silicon wafer-based internal reflection elements (IREs) present many practical advantages over the prisms conventionally used for attenuated total reflection spectroscopy in the infrared. We examine two methods of using minimally prepared IREs that have appeared in the literature, edge-coupled (EC) and prism-coupled (PC), in conjunction with a liquid flow cell. Polarization measurements show that radiation entering the PC-IRE becomes depolarized due to stress-induced birefringence, and transmission through the edge of the EC-IRE also affects the polarization state. Quantification of the noise and a calibration using a series of sodium acetate solutions show the sensitivity of the PC-IRE outweighs the lower noise obtainable with the EC- IRE.
Citation
Applied Spectroscopy
Volume
72
Issue
9

Keywords

infrared spectroscopy, attentuated total reflection, in situ spectroscopy

Citation

Sperling, B. and Kalanyan, B. (2018), Evaluation of silicon wafer-based internal reflection elements for use with in situ FT-IR spectroscopy, Applied Spectroscopy (Accessed May 22, 2024)

Issues

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Created September 1, 2018, Updated September 27, 2018