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Search Publications by: Jonathan Wyrick (Fed)

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Displaying 1 - 16 of 16

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

February 24, 2024
Author(s)
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors, few-donor/quantum dot devices for spin manipulation and arrayed few-donor devices for analog

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

November 11, 2022
Author(s)
Richard M. Silver, Jonathan Wyrick, Xiqiao Wang, Ranjit Kashid, Garnett W. Bryant, Albert Rigosi, Pradeep Namboodiri, Ehsan Khatami
The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Due to the long-range Coulomb interactions, accessible low

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

November 1, 2022
Author(s)
Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit Kashid, Fan Fei, Joseph Fox, Richard M. Silver
Doping of Si using the scanning probe technique of hydrogen depassivation lithography has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that

Electron-electron interactions in low-dimensional Si:P delta layers

June 15, 2020
Author(s)
Joseph Hagmann, Xiqiao Wang, Ranjit Kashid, Pradeep Namboodiri, Jonathan Wyrick, Scott W. Schmucker, Michael Stewart, Richard M. Silver, Curt A. Richter
Key to producing quantum computing devices based on the atomistic placement of dopants in silicon by scanning tunneling microscope (STM) lithography is the formation of embedded highly doped Si:P delta layers (δ-layers). This study investigates the

Atomic-scale control of tunneling in donor-based devices

May 11, 2020
Author(s)
Xiqiao Wang, Jonathan E. Wyrick, Ranjit V. Kashid, Pradeep N. Namboodiri, Scott W. Schmucker, Andrew Murphy, Michael D. Stewart, Richard M. Silver
Atomically precise donor-based quantum devices are a promising candidate for scalable solid- state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange

Low-resistance, high-yield electrical contacts to atom scale Si:P devices using palladium silicide

March 29, 2019
Author(s)
Scott W. Schmucker, Pradeep Namboodiri, Ranjit Kashid, Xiqiao Wang, Binhui Hu, Jonathan Wyrick, Alline Myers, Joshua D. Schumacher, Richard M. Silver, Michael Stewart
Scanning tunneling microscopy (STM) enables the fabrication of 2-D delta-doped structures in Si with atomistic precision, with applications from tunnel field effect transistors to qubits. The combination of a very small contact area and the restrictive

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

January 26, 2018
Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the development of both ultra- scaled conventional semiconductor devices and emerging all-silicon

Weak localization thickness measurements of embedded phosphorus delta layers in silicon produced by PH3 dosing

January 23, 2018
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver
The key building blocks for devices based on the deterministic placement of dopants in silicon are the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon

June 29, 2017
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver, Curt A. Richter
The key building block for devices based on the deterministic placement of dopants in silicon is the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

An On/Off Berry Phase Switching with Circular Graphene Resonators

May 26, 2017
Author(s)
Fereshte Ghahari Kermani, Daniel T. Walkup, Christopher Gutierrez, Joaquin R. Nieva, Yue Y. Zhao, Jonathan E. Wyrick, Donat F. Natterer, William G. Cullen, Kenji Watanabe, Takashi Taniguchi, Leonid Levitov, Nikolai B. Zhitenev, Joseph A. Stroscio
Berry phase is an example of anholonomy, where the phase of a quantum state may not return to its original value after its parameters cycle around a closed path; instead the quantum system’s wavefunction may acquire a real measurable phase difference

Tomography of a probe potential using atomic sensors on graphene

November 7, 2016
Author(s)
Jonathan E. Wyrick, Donat F. Natterer, Yue Y. Zhao, Kenji Watanabe, Takashi Taniguchi, William G. Cullen, Joseph A. Stroscio
One of the great advances in our ability to probe the quantum world has been the ability to manipulate the electronic structure of materials by constructing artificial nanostructures on surfaces using atomic manipulation of single adatoms with scanning

Strong asymmetric charge carrier dependence in inelastic electron tunneling spectroscopy of graphene phonons

June 16, 2015
Author(s)
Donat F. Natterer, Yue Y. Zhao, Jonathan E. Wyrick, Yang-Hao Chan, Wen-Ying Ruan, Mei-Yin Chou, Kenji Watanabe, Takashi Taniguchi, Nikolai B. Zhitenev, Joseph A. Stroscio
The observation of phonons in graphene by inelastic electron tunneling spectroscopy has been met with limited success in previous measurements arising from weak signals and other spectral features which inhibit a clear distinction between phonons and

Creating and Probing Electron Whispering-Gallery Modes in Graphene

May 8, 2015
Author(s)
Yue Y. Zhao, Jonathan E. Wyrick, Donat F. Natterer, Joaquin R. Nieva, Cyprian Lewandowski, Kenji Watanabe, Takashi Taniguchi, Leonid Levitov, Nikolai B. Zhitenev, Joseph A. Stroscio
Designing high-finesse resonant cavities for electronic waves is hampered by the short coherence lengths in solids. Previous approaches, e.g. the seminal nanometer-sized quantum corrals, depend on careful positioning of adatoms at clean surfaces. Here we

Quasiparticle scattering from topological crystalline insulator SnTe (001) surface states

June 27, 2014
Author(s)
Duming Zhang, Hongwoo H. Baek, Jeonghoon Ha, Tong Zhang, Jonathan E. Wyrick, Albert Davydov, Young Kuk, Joseph A. Stroscio
Recently, the topological classification of electronic states has been extended to a new class of matter known as topological crystalline insulators. Similar to topological insulators, topological crystalline insulators also have spin-momentum locked