Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

Published

October 25, 2024

Author(s)

Pradeep Namboodiri, Mark-yves Gaunin, Alessandro Restelli, Ranjit Kashid, Xiqiao Wang, Fan Fei, Brian Courts, FNU Utsav, Vijith Kamalon Pulikodan, Jonathan Wyrick, Richard M. Silver

Abstract

Coherent manipulation of electron spins is one of the central problems of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow high frequency RF pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board (PCB) and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. Additionally, we propose a novel design by applying a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength in test devices as a function of distance.

Citation

Journal of Vacuum Science and Technology B

Volume

42

Issue

6

Pub Type

Journals

Download Paper

https://doi.org/10.1116/6.0004051

Local Download

Keywords

Coplanar waveguides, Electron Spin Resonance

Citation

Namboodiri, P. , Gaunin, M. , Restelli, A. , Kashid, R. , Wang, X. , Fei, F. , Courts, B. , Utsav, F. , Kamalon Pulikodan, V. , Wyrick, J. and Silver, R. (2024), Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices, Journal of Vacuum Science and Technology B, [online], https://doi.org/10.1116/6.0004051, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=958573 (Accessed December 13, 2024)