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Search Publications by: Bob R. Keller (Fed)

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Displaying 26 - 46 of 46

Transmission EBSD in the Scanning Electron Microscope

May 1, 2013
Author(s)
Roy H. Geiss, Katherine P. Rice, Robert R. Keller
A new method for obtaining Kikuchi diffraction patterns from thin specimens in transmission has been developed for use in the SEM, scanning electron microscope, using a conventional electron backscatter diffraction (EBSD) detector and with a slight

Transmission EBSD from 10 nm domains in a scanning electron microscope

March 1, 2012
Author(s)
Robert R. Keller, Roy H. Geiss
The spatial resolution of electron diffraction within the scanning electron microscope (SEM) has progressed from channelling methods capable of measuring crystallographic characteristics from 10 μm regions to electron backscatter diffraction (EBSD) methods

Reliability Testing of Advanced Interconnect Materials

November 10, 2011
Author(s)
Robert R. Keller, Mark C. Strus, Ann C. Chiaramonti Debay, David T. Read, Younglae Kim, Yung J. Jung
We describe the development of electrical test methods to evaluate damage that determines reliability in advanced, small-scale conductors, including damascene copper and aligned carbon nanotube networks. Rapid thermal cycling induced during high-current AC

Electrical Reliability Testing of Single-Walled Carbon Nanotube Networks

May 18, 2011
Author(s)
Mark C. Strus, Ann C. Chiaramonti Debay, Robert R. Keller, Yung J. Jung, Younglae Kim
We present test methods to investigate the electrical reliability of nanoscale lines of highly-aligned, networked, metallic/semiconducting single-walled carbon nanotubes (SWCNTs) fabricated through a template-based fluidic assembly process. We find that

Electromigration of Cu Interconnects Under AC and DC Test Conditions

May 15, 2011
Author(s)
Robert R. Keller, David T. Read, Roey Shaviv, Greg Harm, Sangita Kumari
Electromigration of a 65 nm technology generation test vehicle was measured using DC, AC followed by DC, and three rectangular wave DC stressing conditions at 598 K. In some of the experiments samples were allowed to cool to room temperature between stress

Metrologies for Mechanical Response of Micro- and Nanoscale Systems

January 1, 2008
Author(s)
Robert Keller, Donna C. Hurley, David T. Read, Paul Rice
This chapter describes metrologies developed by NIST scientists and collaborators for mechanical properties of dimensionally-constrained materials; these approaches make use of methods inherently sensitive to small volumes. Attention is focused on

Evaluation of Thin Film Mechanical Properties by Means of Electrical Test Methods

September 30, 2007
Author(s)
Nicholas Barbosa, Robert Keller, David T. Read, Richard P. Vinci
The ability to measure the mechanical properties of thin films and small scale structures is essential in designing reliable components at the micro- and nano-scales. It is known that the mechanical properties of thin film materials deviate from relations

Report of the Workshop on Reliability Issues in Nanomaterials

January 1, 2007
Author(s)
Robert Keller, David T. Read, Roop L. Mahajan
The Workshop on Reliability Issues in Nanomaterials was held at the Boulder Laboratories of the U. S. Department of Commerce on August 17-19, 2004. It was organized by the National Institute of Standards and Technology (NIST) and was designed to promote a

Results of a Nanoindentation Round Robin on Thin Film Copper on Silicon

January 1, 2007
Author(s)
David T. Read, Robert Keller, Nicholas Barbosa, Roy H. Geiss
Nanoindentation is used in a variety of fields to measure material hardness and elastic modulus. This test technique is especially attractive for thin films because of the difficulty of conducting tensile or other conventional mechanical characterization

Strain-Induced Grain Growth during Rapid Thermal Cycling of Aluminum Interconnects

January 1, 2007
Author(s)
Robert Keller, Roy H. Geiss, Nicholas Barbosa, Andrew Slifka, David T. Read
We demonstrate by use of automated electron backscatter diffraction (EBSD) the rapid growth of grains in non-passivated, sputtered Al-1Si interconnects during 200 Hz thermal cycling induced by alternating electric current. Mean grain diameters were

COMPARISON OF TEXTURE IN COPPER AND ALUMINUM THIN FILMS AS DETERMINED BY XRD AND EBSD

October 2, 2006
Author(s)
Jens Mueller, Davor Balzar, Roy H. Geiss, David T. Read, Robert Keller
Texture in materials has a large influence on many properties of thin films; it is customarily determined by neutron or X-ray diffraction by measuring pole figures and evaluating orientation-distribution functions (ODF). X-ray diffraction (XRD) was the

Electrical Methods for Mechanical Characterization of Interconnect Thin Films

September 1, 2005
Author(s)
Robert Keller, Cynthia A. Volkert, Roy H. Geiss, Andrew Slifka, David T. Read, Nicholas Barbosa, Reiner Monig
We describe the use of electrical methods for evaluating mechanical reliability and properties of patterned copper and aluminum interconnects on silicon substrates. The approach makes use of controlled Joule heating, which causes thermal strains in the

Workshop on Reliability Issues in Nanomaterials

August 1, 2005
Author(s)
Robert Keller, David T. Read, Roop L. Mahajan
The Workshop on Reliability Issues in Nanomaterials was held at the Boulder Laboratories of the National Institute of Standards and Technology (NIST) on August 17-19, 2004. It was designed to promote a particular subset of NIST?s responsibilities under the

Electric Current Induced Thermomechanical Fatigue Testing of Interconnects

March 1, 2005
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
We demonstrate the use of electrical methods for evaluating the thermomechanical fatigue properties of patterned aluminum and copper interconnects on silicon-based substrates. Through a careful selection of alternating current frequency and current density

Microstructure Evolution during Alternating-Current-lnduced Fatigue

November 1, 2004
Author(s)
Robert Keller, Roy H. Geiss, Yi-Wen Cheng, David T. Read
Subjecting electronic interconnect lines to high-density, low.frequency alternating current creates cyclic thermomechanical stresses that eventually cause electrical failure. A detailed understanding of the failure process could contribute to both