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Publications

Search Publications by

Jason Ryan (Fed)

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Displaying 51 - 57 of 57

Spectroscopic charge pumping investigation of the amphoteric nature of Si/SiO2 interface states

June 6, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle
The amphoteric nature of Si/SiO2 interface states in submicron sized metal-oxide-silicon-field-effect-transistors is observed using an enhanced spectroscopic charge pumping method. The method’s simplicity and high sensitivity makes it a powerful tool for

A new interface defect spectroscopy method

April 26, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Vinny Tilak, Jody Fronheiser

A new interface defect spectroscopy method

April 13, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Jason P. Campbell, Fei Zhang, Chen Wang, John S. Suehle, Vinny Tilak, Jody Fronheiser

A New Interface Defect Spectroscopy Method

April 12, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, C Wang, Jason P. Campbell, John S. Suehle, Vinayak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing

A New Interface Defect Spectroscopy Method

April 11, 2011
Author(s)
Jason T. Ryan, Liangchun (. Yu, Jae Han, Joseph J. Kopanski, Kin P. Cheung, Fei Zhang, Chen Wang, Jason P. Campbell, John S. Suehle, Viniyak Tilak, Jody Fronheiser
A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing