Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter
Guangfan Jiao, Jiwu Lu, Jason Campbell, Jason Ryan, Kin P. Cheung, Chadwin D. Young, Gennadi Bersuker
This work utilizes device-level eye-diagram measurements to examine NBTI-induced changes in timing jitter at circuit speeds. The measured jitter is examined for a variety of ring-oscillator and pseudo-random gate patterns. The ring-oscillator patterns were chosen to mimic typical NBTI reliability characterizations while the pseudo-random patterns act as an approximation for real world random logic. Our observations indicate that NBTI-induced jitter is gate pattern-dependent and most severe for the pseudo-random case. Collectively, this work strongly suggests that typical NBTI ring-oscillator characterization methods are insensitive to random logic timing jitter.
IEEE Transactions on Device and Materials Reliability
, Lu, J.
, Campbell, J.
, Ryan, J.
, Cheung, K.
, Young, C.
and Bersuker, G.
Device-Level Experimental Observations of NBTI-Induced Random Timing Jitter, IEEE Transactions on Device and Materials Reliability, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=916021
(Accessed August 19, 2022)