Ryan, J.
, Matsuda, A.
, Campbell, J.
and Cheung, K.
(2015),
Interface-State Capture Cross Section — Why Does It Vary So Much?, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917503
(Accessed October 6, 2024)
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Interface-State Capture Cross Section Why Does It Vary So Much?
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Abstract
A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement approach and does not provide any meaningful insight into the physics involved. We argue that capture cross section is not a physical property of interface defects nor is there any need to assign capture cross section values.Citation
Applied Physics Letters
Pub Type
Journals
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Keywords
MOS devices, capture cross section, charge pumping, semiconductor-insulator interfaces
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Created April 20, 2015, Updated February 19, 2017