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Interface-State Capture Cross Section — Why Does It Vary So Much?

Published

Author(s)

Jason T. Ryan, Asahiko Matsuda, Jason P. Campbell, Kin P. Cheung

Abstract

A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state theory, we show that the value of capture cross section is extremely sensitive to the measurement approach and does not provide any meaningful insight into the physics involved. We argue that capture cross section is not a physical property of interface defects nor is there any need to assign capture cross section values.
Citation
Applied Physics Letters

Keywords

MOS devices, capture cross section, charge pumping, semiconductor-insulator interfaces

Citation

Ryan, J. , Matsuda, A. , Campbell, J. and Cheung, K. (2015), Interface-State Capture Cross Section — Why Does It Vary So Much?, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=917503 (Accessed August 10, 2022)
Created April 20, 2015, Updated February 19, 2017