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Accurate Fast Capacitance Measurements for Reliable Device Characterization

Published

Author(s)

Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart

Abstract

As device dimensions continue to scale, transient phenomena are becoming increasingly more important to understand for both performance and reliability considerations. Recently, fast capacitances versus voltage (CV) measurements have been gaining attention as a promising measurement tool to characterize the transient phenomena. However, fast CV has mainly been limited to monitoring stress-induced deviations in accumulation capacitance due, at least in part, to the inability to measure the full CV curve accurately. In this work we identify and mitigate the measurement considerations required to obtain a remarkably accurate correspondence between a complete fast CV measurement, from accumulation to inversion, and a conventional CV measurement on the same device. The results indicate that fast CV can be a potentially powerful tool for device characterization and reliability measurements
Citation
IEEE Transactions on Electron Devices

Keywords

Capacitance measurements, device reliability, fast CV, MOSFET, transient measurement

Citation

Shrestha, P. , Cheung, K. , Campbell, J. , Ryan, J. and Baumgart, H. (2014), Accurate Fast Capacitance Measurements for Reliable Device Characterization, IEEE Transactions on Electron Devices (Accessed August 3, 2021)
Created July 1, 2014, Updated February 19, 2017