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Displaying 1 - 21 of 21

High-throughput bend-strengths of ultra-small polysilicon MEMS components

May 17, 2021
Author(s)
Robert Cook, Brad Boyce, Lawrence Henry Friedman, Frank DelRio
The strength distribution of polysilicon bend specimens, approximately 10 um in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens

Shoulder fillet effects in strength distributions of MEMS components

November 6, 2020
Author(s)
Frank W. DelRio, Brad L. Boyce, Jake T. Benzing, Lawrence H. Friedman, Robert F. Cook
The failure forces and fracture strengths of polysilicon MEMS components in the form of stepped tensile bars with shoulder fillets were measured using a sequential failure chain methodology. Approximately 150 specimens for each of four fillet geometries

Microscale Mapping of Structure and Stress in Barium Titanate

April 19, 2020
Author(s)
Jane A. Howell, Mark D. Vaudin, Lawrence Henry Friedman, Robert F. Cook
Cross-correlation of electron backscatter diffraction (EBSD) patterns was used to generate rotation, strain, and stress maps of single-crystal tetragonal barium titanate (BaTiO3) containing isolated, small, sub-micrometer a domains separated from a c-

Electron Reflectometry for Measuring Nanostructures on Opaque Substrate

July 8, 2019
Author(s)
Lawrence H. Friedman, Wen-Li Wu
Here, we present a method for measuring dimensions of nanostructures using specular reflection of electrons from an opaque surface. Development of this method has been motivated by measurement needs of the semiconductor industry, but it can also be more

Lamellar and bundled domain rotations in barium titanate

August 27, 2018
Author(s)
Jane A. Howell, Mark D. Vaudin, Lawrence Henry Friedman, Robert F. Cook
Cross-correlation of electron backscatter diffraction patterns has been used to generate rotation maps of single crystals of tetragonal barium titanate (BaTiO3) containing multiple lamellae and bundles of  90 domains. Rotation measurement angular

Two-Dimensional Strain-Mapping by Electron Backscatter Diffraction and Confocal Raman Spectroscopy

November 27, 2017
Author(s)
Andrew J. Gayle, Lawrence Henry Friedman, Ryan Beams, Brian G. Bush, Yvonne B. Gerbig, Chris A. Michaels, Mark D. Vaudin, Robert F. Cook
The strain field surrounding a spherical indentation in silicon is mapped in two dimensions (2- D) using electron backscatter diffraction (EBSD) cross-correlation and confocal Raman spectroscopy techniques. The 200 mN indentation created a 4 m diameter

Strain Measurement of 3D Structured Nanodevices by EBSD

August 20, 2017
Author(s)
William A. Osborn, Lawrence H. Friedman, Mark D. Vaudin
We present a new methodology to accurately measure strain magnitudes from 3D nanodevices using Electron Backscatter Diffraction (EBSD). Because the dimensions of features on these devices are smaller than the interaction volume for backscattered electrons

Near-theoretical fracture strengths in native and oxidized silicon nanowires

June 21, 2016
Author(s)
Frank W. DelRio, Ryan M. White, Sergiy Krylyuk, Albert Davydov, Lawrence H. Friedman, Robert F. Cook
In this letter, fracture strengths σf of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σf in the Si was comparable to the

Stochastic behavior of nanoscale dielectric wall buckling

March 16, 2016
Author(s)
Lawrence H. Friedman, Igor Levin, Robert F. Cook
The random buckling patterns of nanoscale dielectric walls are analyzed using a nonlinear multi-scale stochastic method that combines experimental measurements with simulations. The dielectric walls, approximately 200 nm tall and 20 nm wide, consist of

Assessing Electron Backscattered Diffraction and Confocal Raman Microscopy Strain Mapping Using Wedge-indented Si

February 17, 2016
Author(s)
Lawrence Henry Friedman, Mark D. Vaudin, Stephan J. Stranick, Gheorghe Stan, Yvonne B. Gerbig, William Alexander Osborn, Robert F. Cook
The accuracy of electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) for small-scale strain mapping are assessed using the multi-axial strain field surrounding a wedge indentation in Si as a test vehicle. The strain field is

Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si

January 1, 2015
Author(s)
Mark D. Vaudin, William A. Osborn, Lawrence H. Friedman, Justin M. Gorham, Robert F. Cook, Victor Vartanian
Patterned SiGe thin film structures, heteroepitaxially deposited on Si substrates, are investigated as potential reference standards to establish the accuracy of high resolution electron backscattered diffraction (HR-EBSD) strain measurement methods. The

Combining nanocalorimetry and dynamic transmission electron microscopy for in situ characterization of materials processes under rapid heating and cooling

August 18, 2014
Author(s)
Michael D. Grapes, Thomas LaGrange, Lawrence Henry Friedman, Bryan W. Reed, Geoffrey H. Campbell, Timothy P. Weihs, David A. LaVan
Nanocalorimetry is a chip-based thermal analysis technique capable of analyzing endothermic and exothermic reactions at very high heating and cooling rates. Here we couple a nanocalorimeter with an extremely fast in situ microstructural characterization

Prototype cantilevers for quantitative lateral force microscopy

September 27, 2011
Author(s)
Mark Reitsma, Richard S. Gates, Lawrence H. Friedman, Robert F. Cook
Prototype cantilevers that enable quantitative micro- to nano-scale surface force measurements using contact-mode atomic force microscopy (AFM) are presented. The “Hammerhead” cantilevers allow precise optical lever system calibrations for cantilever