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High-throughput bend-strengths of ultra-small polysilicon MEMS components



Robert Cook, Brad Boyce, Lawrence Henry Friedman, Frank DelRio


The strength distribution of polysilicon bend specimens, approximately 10 um in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggests that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.
Applied Physics Letters


Fracture mechanics, Semiconductor materials, MEMS devices, Finite-element analysis, Polycrystalline material, Stochastic processes


Cook, R. , Boyce, B. , Friedman, L. and DelRio, F. (2021), High-throughput bend-strengths of ultra-small polysilicon MEMS components, Applied Physics Letters, [online],, (Accessed April 23, 2024)
Created May 17, 2021, Updated December 1, 2022