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PUBLICATIONS

High-throughput bend-strengths of ultra-small polysilicon MEMS components

Published

Author(s)

Robert Cook, Brad Boyce, Lawrence Henry Friedman, Frank DelRio

Abstract

The strength distribution of polysilicon bend specimens, approximately 10 um in size, is measured using a high-throughput microelectromechanical system fabrication and testing method. The distribution is predicted from reference tests on tensile specimens and finite element analysis of the bend specimen geometry incorporated into a stochastic extreme-value strength framework. Agreement between experiment and prediction suggests that the ultra-small specimens may be at the limit of extreme-value scaling and contain only one strength-controlling flaw/specimen.
Citation
Applied Physics Letters
Volume
118
Pub Type
Journals

Download Paper

https://doi.org/10.1063/5.0049521
Local Download

Keywords

Fracture mechanics, Semiconductor materials, MEMS devices, Finite-element analysis, Polycrystalline material, Stochastic processes
Nanomechanics, Modeling and computational material science and Mechanical properties

Citation

Cook, R. , Boyce, B. , Friedman, L. and DelRio, F. (2021), High-throughput bend-strengths of ultra-small polysilicon MEMS components, Applied Physics Letters, [online], https://doi.org/10.1063/5.0049521, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=931889 (Accessed March 13, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created May 17, 2021, Updated December 1, 2022