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Strain Measurement of 3D Structured Nanodevices by EBSD



William A. Osborn, Lawrence H. Friedman, Mark D. Vaudin


We present a new methodology to accurately measure strain magnitudes from 3D nanodevices using Electron Backscatter Diffraction (EBSD). Because the dimensions of features on these devices are smaller than the interaction volume for backscattered electrons, EBSD patterns from 3D nanodevices can be the superposition of patterns from multiple material regions simultaneously. The effect of this superposition on EBSD strain measurement is demonstrated along with an approach to separate EBSD patterns from these devices via subtraction. The subtraction procedure is applied to 33 nm wide SiGe lines and provides accurate strain magnitudes where the traditional EBSD strain analysis method yields an order of magnitude underestimate of strain. The approach provides a strain measurement technique for nanoscale 3D structures without requiring transmission electron microscopy.


EBSD, strain, strain measurement, cross-correlation, Electron Backscatter Diffraction, nanoscale, SiGe, silicon


Osborn, W. , Friedman, L. and Vaudin, M. (2017), Strain Measurement of 3D Structured Nanodevices by EBSD, Ultramicroscopy (Accessed May 21, 2024)


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Created August 20, 2017, Updated November 6, 2017