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Search Publications by: David Gundlach ()

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Displaying 51 - 75 of 91

Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

June 1, 2010
Author(s)
Akin Akturk, M. Holloway, S. Potbhare, David J. Gundlach, B Li, Neil Goldsman, M Peckerar, Kin P. Cheung
We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and

Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy

May 1, 2010
Author(s)
L C. Teague, Oana Jurchescu, Curt A. Richter, Sanker Subramanian, John E. Anthony, Thomas Jackson, David J. Gundlach, James Kushmerick
We report scanning Kelvin probe microscopy SKPM of single crystal difluoro bistriethylsilylethynyl anthradithiophene diF-TESADT organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact

Flexible Titanium Dioxide Memory

April 25, 2010
Author(s)
Nadine Gergel-Hackett, Laurie Stephey, Barbara Dunlap, Behrang Hamadani, David J. Gundlach, Curt A. Richter

Characterization of Soluble Anthradithiophene Derivatives

March 18, 2010
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, John E. Anthony, David J. Gundlach
We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole

Thin film morphology of organic electronic materials

March 1, 2010
Author(s)
Xinran Zhang, Steven Hudson, Dean DeLongchamp, David J. Gundlach
Organic electronic materials are desired for low-cost printed circuits. As expected, the microstructure of these materials is crucial for their performance, such as charge-carrier mobility. These materials typically comprise anisotropic molecules, and the

Flexible Memristors

December 3, 2009
Author(s)
Nadine E. Gergel-Hackett, Laurie A. Stephey, Barbara Dunlap, Behrang H. Hamadani, David J. Gundlach, Curt A. Richter

Flexible Memristors

December 3, 2009
Author(s)
Nadine Gergel-Hackett, Laurie Stephey, Barbara Dunlap, Behrang Hamadani, David J. Gundlach, Curt A. Richter

Electrical Characterization of Soluble Anthradithiophene Derivatives

November 19, 2009
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, John E. Anthony, David J. Gundlach
Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pentacene

Effects of Polymorphism on Charge Transport in Organic Semiconductors

August 3, 2009
Author(s)
Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R. Parkin, Brandon Vogel, John E. Anthony, Thomas Jackson, David J. Gundlach
The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity

Substrate-dependent interface composition and charge transport in films for organic photovoltaics

June 9, 2009
Author(s)
David Germack, Calvin Chan, Behrang Hamadani, Lee J. Richter, Daniel A. Fischer, David J. Gundlach, Dean DeLongchamp
The buried interface composition of polymer-fullerene blends is found by near edge X ray absorption fine structure (NEXAFS) spectroscopy to depend on the surface energy of the substrate upon which they are cast. The interface composition determines the