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Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation

Published

Author(s)

Akin Akturk, M. Holloway, S. Potbhare, David J. Gundlach, B Li, Neil Goldsman, M Peckerar, Kin P. Cheung

Abstract

We have developed compact and physics-based distributed numerical models for cryogenic bulkMOSFET operation down to 20 K to advance simulation and first-pass design of device and circuit operation at low temperatures. To achieve this, we measured and simulated temperature-dependent current voltage characteristics of 0.16- and 0.18-μm bulk MOSFETs.
Citation
IEEE Transactions on Electron Devices
Volume
57
Issue
6

Citation

Akturk, A. , Holloway, M. , Potbhare, S. , Gundlach, D. , Li, B. , Goldsman, N. , Peckerar, M. and Cheung, K. (2010), Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907042 (Accessed April 23, 2024)
Created May 31, 2010, Updated October 14, 2021