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Effects of Polymorphism on Charge Transport in Organic Semiconductors



Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R. Parkin, Brandon Vogel, John E. Anthony, Thomas Jackson, David J. Gundlach


The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity processing methods that enable this performance. We identify two polymorphs of diF TES ADT and report on their crystal structure, formation and the effect of the different molecular packings on the electronic properties. The polymorphs are interconvertible through a first-order enantiotropic phase transition that occurs at T = 294 K. We discuss the technological implications that a room-temperature phase transition has on the performance and stability of devices fabricated with this organic semiconductor.
Physical Review B


Jurchescu, O. , Devin, M. , Subramanian, S. , Parkin, S. , Vogel, B. , Anthony, J. , Jackson, T. and Gundlach, D. (2009), Effects of Polymorphism on Charge Transport in Organic Semiconductors, Physical Review B, [online], (Accessed April 21, 2024)
Created August 3, 2009, Updated February 19, 2017