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PUBLICATIONS

Effects of Polymorphism on Charge Transport in Organic Semiconductors

Published

Author(s)

Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R. Parkin, Brandon Vogel, John E. Anthony, Thomas Jackson, David J. Gundlach

Abstract

The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity processing methods that enable this performance. We identify two polymorphs of diF TES ADT and report on their crystal structure, formation and the effect of the different molecular packings on the electronic properties. The polymorphs are interconvertible through a first-order enantiotropic phase transition that occurs at T = 294 K. We discuss the technological implications that a room-temperature phase transition has on the performance and stability of devices fabricated with this organic semiconductor.
Citation
Physical Review B
Volume
80
Pub Type
Journals

Download Paper

Local Download
Semiconductors

Citation

Jurchescu, O. , Devin, M. , Subramanian, S. , Parkin, S. , Vogel, B. , Anthony, J. , Jackson, T. and Gundlach, D. (2009), Effects of Polymorphism on Charge Transport in Organic Semiconductors, Physical Review B, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33181 (Accessed October 13, 2025)

Issues

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Created August 3, 2009, Updated February 19, 2017
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