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Characterization of Soluble Anthradithiophene Derivatives

Published

Author(s)

Brad Conrad, Calvin Chan, Marsha A. Loth, John E. Anthony, David J. Gundlach

Abstract

We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole mobility is shown to exceed 0.05 cm$^{2}$/Vs with on/off ratios of 10$^{7}$. F- TBDMS ADT is also observed to be readily soluble with films spun cast onto surface treated SiO$_ {2}$ displaying a mobility >0.002 cm$^{2}$/Vs. These electrical measurements will be correlated with growth, morphology, and the performance of related F-ADT derivatives.

Citation

Conrad, B. , Chan, C. , Loth, M. , Anthony, J. and Gundlach, D. (2010), Characterization of Soluble Anthradithiophene Derivatives (Accessed July 18, 2024)

Issues

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Created March 18, 2010, Updated February 19, 2017