Conrad, B.
, Chan, C.
, Loth, M.
, Anthony, J.
and Gundlach, D.
(2010),
Characterization of Soluble Anthradithiophene Derivatives
(Accessed May 2, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Characterization of Soluble Anthradithiophene Derivatives
Published
Author(s)
, , Marsha A. Loth, John E. Anthony,
Abstract
We will discuss the growth and electrical measurements of a newly developed, partially fluorinated anthradithiophene (F-ADT) derivative with tert-butyldiphenylsilyl (TBDMS) side groups. Single crystals of the material can be readily grown and device hole mobility is shown to exceed 0.05 cm$^{2}$/Vs with on/off ratios of 10$^{7}$. F- TBDMS ADT is also observed to be readily soluble with films spun cast onto surface treated SiO$_ {2}$ displaying a mobility >0.002 cm$^{2}$/Vs. These electrical measurements will be correlated with growth, morphology, and the performance of related F-ADT derivatives.Pub Type
Talks
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 18, 2010, Updated February 19, 2017