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Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy

Published

Author(s)

L C. Teague, Oana Jurchescu, Curt A. Richter, Sanker Subramanian, John E. Anthony, Thomas Jackson, David J. Gundlach, James Kushmerick

Abstract

We report scanning Kelvin probe microscopy SKPM of single crystal difluoro bistriethylsilylethynyl anthradithiophene diF-TESADT organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.
Citation
Applied Physics Letters
Volume
96

Citation

Teague, L. , Jurchescu, O. , Richter, C. , Subramanian, S. , Anthony, J. , Jackson, T. , Gundlach, D. and Kushmerick, J. (2010), Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907043 (Accessed July 23, 2024)

Issues

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Created April 30, 2010, Updated October 14, 2021