Teague, L.
, Jurchescu, O.
, Richter, C.
, Subramanian, S.
, Anthony, J.
, Jackson, T.
, Gundlach, D.
and Kushmerick, J.
(2010),
Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907043
(Accessed December 13, 2024)
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Probing Stress Effects in Single Crystal Organic Transistors by Scanning Kelvin Probe Microscopy
Published
Author(s)
L C. Teague, , , Sanker Subramanian, John E. Anthony, Thomas Jackson, , James Kushmerick
Abstract
We report scanning Kelvin probe microscopy SKPM of single crystal difluoro bistriethylsilylethynyl anthradithiophene diF-TESADT organic transistors. SKPM provides a direct measurement of the intrinsic charge transport in the crystals independent of contact effects and reveals that degradation of device performance occurs over a time period of minutes as the diF-TESADT crystal becomes charged.Citation
Applied Physics Letters
Volume
96
Pub Type
Journals
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Citation
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Created April 30, 2010, Updated October 14, 2021