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Displaying 1 - 25 of 45

Measurement and Gate-Voltage Dependence of Channel and Series Resistances in Lateral Depletion-Mode b-Ga2O3 MOSFETs

June 9, 2023
Author(s)
Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Kin (Charles) Cheung, Sujitra Pookpanratana, Qiliang Li
Lateral depletion-mode, beta-phase gallium oxide (β-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-drain spacings of 3 µm, 8 µm, and 13 µm are studied using a modified Transfer Length Method (TLM) to obtain sheet

Novel Nanofluidic Chemical Cells based on Self-Assembled Solid-State SiO2 Nanotubes

August 30, 2017
Author(s)
Hao Zhu, Haitao Li, Arvind Balijepalli, Joseph W. Robertson, Sergiy Krylyuk, Albert Davydov, John J. Kasianowicz, John S. Suehle, Qiliang Li
Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes on silicon- on-insulator (SOI) substrates have been successfully fabricated and tested. The vertical SiO2 nanotubes with a smooth cavity are built from Si nanowires which

Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

February 12, 2016
Author(s)
Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker
Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor structure, metal/oxide/molecule/oxide/silicon, where the diruthenium molecule is covalently attached

NIST on a Chip: Realizing SI units with microfabricated alkali vapour cells

October 16, 2015
Author(s)
John E. Kitching, Elizabeth A. Donley, Svenja A. Knappe, Matthew T. Hummon, Argyrios Dellis, Jeffrey A. Sherman, Kartik A. Srinivasan, Vladimir A. Aksyuk, Qiliang Li, Daron A. Westly, Brian J. Roxworthy, Amit Lal
We describe several ways in which microfabricated alkali atom vapour cells might potentially be used to accurately realize a variety of SI units, including the second, the meter, the kelvin, the ampere and the volt, in a compact, low-cost “chip-scale”

Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements

September 30, 2007
Author(s)
Hao Xiong, Dawei Heh, Moshe Gurfinkel, Qiliang Li, Yoram Shapira, Curt A. Richter, Gennadi Bersuker, Choi Rino, John S. Suehle
The electrically active defects in High-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN), charge pumping (CP), and ultra fast Id-Vg methods. The volume trap profile in the stacks is obtained by modeling the drain

Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

September 30, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin