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Search Publications by: Qiliang Li (Assoc)

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Displaying 1 - 23 of 23

Measurement and Gate-Voltage Dependence of Channel and Series Resistances in Lateral Depletion-Mode b-Ga2O3 MOSFETs

June 9, 2023
Author(s)
Ory Maimon, Neil Moser, Kyle Liddy, Andrew Green, Kelson Chabak, Kin (Charles) Cheung, Sujitra Pookpanratana, Qiliang Li
Lateral depletion-mode, beta-phase gallium oxide (β-Ga2O3) metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-drain spacings of 3 µm, 8 µm, and 13 µm are studied using a modified Transfer Length Method (TLM) to obtain sheet

Novel Nanofluidic Chemical Cells based on Self-Assembled Solid-State SiO2 Nanotubes

August 30, 2017
Author(s)
Hao Zhu, Haitao Li, Arvind Balijepalli, Joseph W. Robertson, Sergiy Krylyuk, Albert Davydov, John J. Kasianowicz, John S. Suehle, Qiliang Li
Novel nanofluidic chemical cells based on self-assembled solid-state SiO2 nanotubes on silicon- on-insulator (SOI) substrates have been successfully fabricated and tested. The vertical SiO2 nanotubes with a smooth cavity are built from Si nanowires which

Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

February 12, 2016
Author(s)
Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker
Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor structure, metal/oxide/molecule/oxide/silicon, where the diruthenium molecule is covalently attached

NIST on a Chip: Realizing SI units with microfabricated alkali vapour cells

October 16, 2015
Author(s)
John E. Kitching, Elizabeth A. Donley, Svenja A. Knappe, Matthew T. Hummon, Argyrios Dellis, Jeffrey A. Sherman, Kartik A. Srinivasan, Vladimir A. Aksyuk, Qiliang Li, Daron A. Westly, Brian J. Roxworthy, Amit Lal
We describe several ways in which microfabricated alkali atom vapour cells might potentially be used to accurately realize a variety of SI units, including the second, the meter, the kelvin, the ampere and the volt, in a compact, low-cost “chip-scale”

Characterization of Electrically Active Defects in High-K Gate Dielectrics By Using Low Frequency Noise, Charge Pumping, and Fast Id-Vg measurements

September 30, 2007
Author(s)
Hao Xiong, Dawei Heh, Moshe Gurfinkel, Qiliang Li, Yoram Shapira, Curt A. Richter, Gennadi Bersuker, Choi Rino, John S. Suehle
The electrically active defects in High-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN), charge pumping (CP), and ultra fast Id-Vg methods. The volume trap profile in the stacks is obtained by modeling the drain

Methods to Characterize the Electrical and Mechanical Properties of Si Nanowires

September 30, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Hao Xiong, Monica D. Edelstein, John S. Suehle, Xiaoxiao Zhu, D. E. Ioannou, Curt A. Richter
We report metrology methods to characterize nanowires. In this work, representative devices and test structures, including nanoelectromechanical switches, non-volatile nanowire memory devices with SONOS structure, and both transfer-length-method and Kelvin

Random Telegraph Signals in n-type ZnO Nanowire Field Effect Transistors at Low Temperature

July 30, 2007
Author(s)
Hao Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter, John S. Suehle, Woong-Ki Hong, Takhee Lee, U Falke
Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The characteristics of low frequency noise in the drain current of n-type ZnO FETs have been investigated through random telegraph signals (RTSs) at 4.2 K. At room

Silicon Nanowire Electromechanical Switches for Logic Device Application

July 6, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Monica D. Edelstein, John S. Suehle, Curt A. Richter
Electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes have been fabricated successfully by using single nanowires manipulation and compatible photolithographic processes. The switches are

Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application

May 16, 2007
Author(s)
Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E. Ioannou, Joseph Kopanski, John S. Suehle, Curt A. Richter
We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to

Precise Manipulation and Alignment of Single Nanowire

March 2, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire

Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

March 1, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align

Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

December 1, 2005
Author(s)
Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel
We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress

Silicon Nanowires As Enhancement-mode Schottky-barrier Field-effect Transistors

June 29, 2005
Author(s)
Sang-Mo Koo, Monica D. Edelstein, Qiliang Li, Curt A. Richter, Eric M. Vogel
Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors and excellent enhancement-mode characteristics with high on/off current ratio 107 are