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Displaying 26 - 45 of 45

Random Telegraph Signals in n-type ZnO Nanowire Field Effect Transistors at Low Temperature

July 30, 2007
Author(s)
Hao Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter, John S. Suehle, Woong-Ki Hong, Takhee Lee, U Falke
Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The characteristics of low frequency noise in the drain current of n-type ZnO FETs have been investigated through random telegraph signals (RTSs) at 4.2 K. At room

Silicon Nanowire Electromechanical Switches for Logic Device Application

July 6, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Monica D. Edelstein, John S. Suehle, Curt A. Richter
Electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes have been fabricated successfully by using single nanowires manipulation and compatible photolithographic processes. The switches are

Silicon Nanowire on Oxide/Nitride/Oxide for Memory Application

May 16, 2007
Author(s)
Qiliang Li, Xiaoxiao Zhu, Hao Xiong, Sang-Mo Koo, D. E. Ioannou, Joseph Kopanski, John S. Suehle, Curt A. Richter
We report the fabrication and characterization of Si nanowire memory devices with oxide/nitride/oxide stacked layers as the gate dielectrics and charge storage media. The devices were fabricated by using photolithography to pattern the metal contacts to

Precise Manipulation and Alignment of Single Nanowire

March 2, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
Nanowires and nanotubes are being intensively investigated for nanoelectronic transport applications. The integration of such nanostructures into circuitry requires a simple, high-efficiency and low-cost strategy. Here we develop a single nanowire

Precise Alignment of single Nanowires and Fabrication of Nanoelectromechanical Switch and Other Test Structures

March 1, 2007
Author(s)
Qiliang Li, Sang-Mo Koo, Curt A. Richter, Monica D. Edelstein, John E. Bonevich, Joseph Kopanski, John S. Suehle, Eric M. Vogel
The integration of nanowires and nanotubes into electrical test structures to investigate their nanoelectronic transport properties is a significant challenge. Here we present a single nanowire manipulating system to precisely manipulate and align

Enhanced Channel Modulation in Dual-Gated Silicon Nanowire Transistors

December 1, 2005
Author(s)
Sang-Mo Koo, Qiliang Li, Monica D. Edelstein, Curt A. Richter, Eric M. Vogel
We report an approach to engineer the local band structure of silicon nanowire (SiNW) field-effect transistors (FETs) by using a dual-gated structure. In this device structure, by changing the local bandgap profile of the channel, the top-gate can suppress

Silicon Nanowires As Enhancement-mode Schottky-barrier Field-effect Transistors

June 29, 2005
Author(s)
Sang-Mo Koo, Monica D. Edelstein, Qiliang Li, Curt A. Richter, Eric M. Vogel
Silicon nanowire field-effect transistors (SiNWFETs) have been fabricated with a highly simplified integration scheme to function as Schottky barrier transistors and excellent enhancement-mode characteristics with high on/off current ratio 107 are