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Random Telegraph Signals in n-type ZnO Nanowire Field Effect Transistors at Low Temperature

Published

Author(s)

Hao Xiong, Wenyong Wang, Qiliang Li, Curt A. Richter, John S. Suehle, Woong-Ki Hong, Takhee Lee, U Falke

Abstract

Single-crystal ZnO nanowires have been fabricated as field effect transistors (FETs). The characteristics of low frequency noise in the drain current of n-type ZnO FETs have been investigated through random telegraph signals (RTSs) at 4.2 K. At room temperature, the noise power spectra have classic 1/f dependence. Hooge??s parameter is estimated to be 5 ?e 10-3. At 4.2 K, the device??s noise spectra change from 1/f to Lorentzian type. The current traces as a function of time show random telegraph signals (RTSs) signature. The channel current RTSs are attributed to the correlated carrier number and mobility fluctuation due to the trapping and detrapping of the carriers by discrete border traps in the SiO2. At certain bias condition, the current in the channel shows three-level switching events with amplitudes as high as 40%, from which two individual defects with energies close to the Fermi level in the ZnO channel can be distinguished.
Citation
Applied Physics Letters
Volume
91
Issue
053107

Keywords

1/f noise, nanowire, oxide trap, Random Telegraph Signal, ZnO

Citation

Xiong, H. , Wang, W. , Li, Q. , Richter, C. , Suehle, J. , Hong, W. , Lee, T. and Falke, U. (2007), Random Telegraph Signals in n-type ZnO Nanowire Field Effect Transistors at Low Temperature, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32662 (Accessed April 20, 2024)
Created July 29, 2007, Updated October 12, 2021