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Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound

Published

Author(s)

Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker

Abstract

Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor structure, metal/oxide/molecule/oxide/silicon, where the diruthenium molecule is covalently attached to the oxide using a unique “click” chemistry attachment which serves two fold purposes: (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. The molecular memory devices display an unsaturated charge storage window, and we attribute this demonstration to the intrinsic properties of the redox-active molecule. These molecular devices are very attractive for future non-volatile memory applications.
Citation
Journal of Physics Condensed Matter
Volume
28
Issue
9

Citation

Pookpanratana, S. , Zhu, H. , Bittle, E. , Natoli, S. , Ren, T. , Richter, C. , Li, Q. and Hacker, C. (2016), Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound, Journal of Physics Condensed Matter (Accessed July 15, 2024)

Issues

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Created February 12, 2016, Updated February 19, 2017