Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound
Sujitra J. Pookpanratana, Hao Zhu, Emily G. Bittle, Sean Natoli, Tong Ren, Curt A. Richter, Qiliang Li, Christina A. Hacker
Non-volatile Flash-based memory devices, which incorporate a novel redox-active diruthenium molecule, is demonstrated. The memory device is in a capacitor structure, metal/oxide/molecule/oxide/silicon, where the diruthenium molecule is covalently attached to the oxide using a unique click chemistry attachment which serves two fold purposes: (1) ease of chemical design and synthesis, and (2) provides an additional spatial barrier between the oxide/silicon to the diruthenium molecule. The molecular memory devices display an unsaturated charge storage window, and we attribute this demonstration to the intrinsic properties of the redox-active molecule. These molecular devices are very attractive for future non-volatile memory applications.
, Zhu, H.
, Bittle, E.
, Natoli, S.
, Ren, T.
, Richter, C.
, Li, Q.
and Hacker, C.
Non-volatile Memory Devices with Redox-active Diruthenium Molecular Compound, Journal of Physics Condensed Matter
(Accessed September 21, 2021)