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Displaying 76 - 100 of 106

Determination of Work Functions in the Ta 1-x Al x N y /HfO 2 Advanced Gate Stack Using Combinatorial Methodology

January 24, 2008
Author(s)
Kao-Shuo Chang, Martin L. Green, Jason Hattrick-Simpers, John S. Suehle, Ichiro Takeuchi, Ozgur Celik, S De Gendt
Combinatorial methodology enables the generation of comprehensive and uniform samples, and therefore data sets, compared to the one-composition-at-a-time approach. We demonstrate the efficacy of combinatorial methodology applied to Ta1-xAlxNy alloys as

Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO 2 for the Advanced Gate Stack

January 23, 2008
Author(s)
Kao-Shuo Chang, Martin L. Green, John S. Suehle, Jason Hattrick-Simpers, Ichiro Takeuchi, K Ohmori, T Chikyow, S De Gendt, Prashant Majhi
Combinatorial methodology offers an efficient platform to accelerate the exploration of new materials. We demonstrate the effectiveness of this technique on the study of new metal gates for the advanced gate stack. We report two examples, Ni-Ti-Pt ternary

Instability of Flatband Voltage in HfO2 Gate Stack Structures under Reducing/Oxidizing Annealing Conditions

August 13, 2007
Author(s)
K Ohmori, P Ahmet, M Yoshitake, T Chikyow, K Shiraishi, K Yamabe, H Watanabe, Y Akasaka, Kao-Shuo Chang, Martin L. Green, K Yamada
We have applied a combinatorial approach to fabricate work function (WF) tuned Pt-W alloy films and used the films as metal electrodes for HfO2/SiO2/Si capacitors. As the ratio RPt of Pt to W changes from 0 to 1, the WF value varies continuously from 4.7

High Contrast Scanning Nano-Raman Spectroscopy of Silicon

June 15, 2007
Author(s)
N Lee, R Hartschuh, D Mehtani, A Kisliuk, M D. Foster, Alexei Sokolov, J F. Maguire, Martin L. Green
We have demonstrated that scanning nano-Raman spectroscopy (SNRS), generally known as tip enhanced Raman spectroscopy (TERS), with side illumination optics can be effectively used for analysis of silicon based structures at the nanoscale. Even though the

The Use of Apertures to Create Discrete Combinatorial Libraries Using Pulsed Laser Deposition

May 18, 2007
Author(s)
Nabil Bassim, Peter K. Schenck, Eugene Donev, Edwin J. Heilweil, Eric J. Cockayne, Martin L. Green, Leonard Feldman
In Pulsed-Laser Deposition (PLD), there are many processing parameters that influence film properties which may be studied such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi

A High-Throughput Thermoelectric Power-Factor Screening Tool for Rapid Construction of Thermoelectric Property Diagrams

January 23, 2007
Author(s)
Makoto Otani, Nathan Lowhorn, Peter K. Schenck, Winnie K. Wong-Ng, Martin L. Green, K Itaka, H Koinuma
We have developed a high throughput screening tool that maps out thermoelectric power factors of combinatorial composition-spread film libraries. The screening tool allows us to measure the electrical conductivity and Seebeck coefficient of over 1000

Combinatorial Study of Ni-Ti-Pt Ternary Metal Gate Electrodes on HfO 2 for the Advanced Gate Stack

October 2, 2006
Author(s)
Kao-Shuo Chang, Martin L. Green, John S. Suehle, Eric M. Vogel, Hao Xiong, Jason Hattrick-Simpers, Ichiro Takeuchi, O Famodu, K Ohnaka, T Chikyow, Prashant Majhi, B H. Lee, M Gardner
We have fabricated combinatorial Ni-Ti-Pt ternary metal gate thin film libraries on HfO2 using magnetron co-sputtering, to investigate flat-band voltage shift (DVfb) and leakage current density (JL) variations. Wavelength dispersive spectroscopy (WDS)