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Displaying 51 - 53 of 53

Strain Relaxation in Patterned Strained Silicon Directly on Insulator Structures

December 19, 2005
Author(s)
R Z. Lei, W Tsai, I Aberg, T B. O'Reilly, J L. Hoyt, D A. Antoniadis, H I. Smith, Albert J. Paul, Martin L. Green, J Li, R Hull
Strain relaxation is studied in Strained Silicon Directly on Insulator (SSDOI) substrates patterned with nano-scale features. Using interference lithography, biaxially-strained SSDOI substrates with 30 nm-thick strained Si on insulator films were patterned
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