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Search Publications by: Ronald L. Jones (Fed)

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Displaying 101 - 125 of 149

Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization

November 1, 2003
Author(s)
Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, R Kolb, D Casa, P J. Bolton, G G. Barclay
The characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using Small Angle X-ray Scattering (SAXS). The transmission scattering geometry employed is capable of high throughput measurements with

3-Dimensional Lineshape Metrology Using Small Angle X-ray Scattering

September 1, 2003
Author(s)
Ronald L. Jones, T J. Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, G G. Barclay
The need for sub-nanometer precision metrology of dense patterns for future technology nodes challenges current methods based on light scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). We provide results of initial tests

Fast Evaluation of Next-Generation Lithographical Patterns by Small Angle X-Ray Scattering

September 1, 2003
Author(s)
T Hu, Ronald L. Jones, Wen-Li Wu, Christopher L. Soles, Eric K. Lin, M Arpan, D M. Casa
As the semiconductor industry moves to next-generation lithographies, evaluation of the patterns is more stringent. We demonstrate the capability of small angel X-ray scattering in a fast evaluation of periodicity, size of the patterns, average profile of

Form of Deprotection in Chemically Amplified Resists

September 1, 2003
Author(s)
Ronald L. Jones, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The push to mass production of patterns with sub-100 nm dimensions will require nanometer level control of feature size, including line edge roughness (LER). Control of LER and sidewall roughness within the length scale of individual molecules requires a

NEXAFS Measurements of the Surface Chemistry of Chemically Amplified Photoresists

September 1, 2003
Author(s)
E Jablonski, M Angelopoulos, H Ito, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, S Sambasivan, Daniel A. Fischer, Ronald L. Jones, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, K Temple
Near edge x-ray absorption fine structure (NEXAFS) spectroscopy was used to quantify the surface composition profile (top 1 nm to 6 nm) of model chemically amplified photoresists with various photo-acid generators. These materials are prone to interfacial

Polyelectrolyte Effects in Model Photoresist Developer Solutions

August 1, 2003
Author(s)
Vivek M. Prabhu, Ronald L. Jones, Eric K. Lin, Wen-Li Wu
We demonstrate that the industrially relevant deprotected photoresist poly(4-hydroxy styrene) is a polyelectrolyte when dissolved in aqueous base solutions. These findings demonstrate the well-known monomer-monomer correlations indicative of

Deprotection Volume Characteristics and Line Edge Morphology in Chemically Amplified Resists

June 1, 2003
Author(s)
Ronald L. Jones, C G. Willson, T J. Hu, Vivek M. Prabhu, Christopher L. Soles, Eric K. Lin, Wen-Li Wu, D L. Goldfarb, M Angelopoulos, B C. Trinque
The focus of this paper is the form of spatial heterogeneity of deprotection at the eventual pattern edge. The form results from the packing of fuzzy blobs consisting of volumes of deprotection created by individual photogenerated acids. The form and size

Sub-Nanometer Wavelength Metrology of Lithographically Prepared Structures: A Comparison of Neutron and X-Ray Scattering

June 1, 2003
Author(s)
Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, D M. Casa, Ndubuisi George Orji, Theodore V. Vorburger, P J. Bolton, Z Barclay
The challenges facing current metrologies based on SEM, AFM, and light scatterometry for technology nodes of 157 nm imaging and beyond suggest that the development of new metrologies capable of routine measurement in this regime are required. We provide

Incoherent Neutron Scattering and the Dynamics of Thin Film Photoresist Polymers

February 1, 2003
Author(s)
Christopher L. Soles, Jack F. Douglas, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
Elastic incoherent neutron scattering is employed to parameterize changes in the atomic/molecular mobility in lithographic polymers as a function of film thickness. Changes in the 200 MHz and faster dynamics are estimated in terms of a harmonic oscillator

Polymer Dynamics and Diffusive Properties in Ultra-Thin Photoresist Films

February 1, 2003
Author(s)
Christopher L. Soles, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Vivek M. Prabhu, Wen-Li Wu, Eric K. Lin, D L. Goldfarb, M Angelopoulos
A series of experiments are presented to demonstrate thin film confinement effects on the diffusive properties in poly(tert-butoxycarboxystyrene) (PBOCSt). Bilayer diffusion couple measurements reveal that as the thickness of a PBOCSt film is decreased

X-Ray Absorption Spectroscopy to Probe Interfacial Issues in Photolithography

February 1, 2003
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Daniel A. Fischer, S Sambasivan, Eric K. Lin, Ronald L. Jones, Christopher Soles, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
Control of the shape, critical dimension (CD), and roughness is critical for the fabrication of sub 100 nm features, where the CD and roughness budget are approaching the molecular dimension of the resist polymers1. Here we utilize near edge X-ray