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Search Publications by: Ronald L. Jones (Fed)

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Displaying 126 - 149 of 149

Chain Conformation in Ultrathin Polymer Films

December 1, 2002
Author(s)
Ronald L. Jones, Christopher Soles, Francis W. Starr, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu, D L. Goldfarb, M Angelopolous
Using Small Angle Neutron Scattering (SANS), we present the first quantitative measurements of the 3-dimensional conformation of macromolecules in thin polymer films of D RG,Bulk. Where D is the film thickness and RG,Bulk is the bulk radius of gyration

Measurement of the Spatial Evolution of the Deprotection Reaction Front With Nanometer Resolution Using Neutron Reflectometry

December 1, 2002
Author(s)
Eric K. Lin, Sushil K. Satija, Wen-Li Wu, Christopher L. Soles, D L. Goldfarb, B C. Trinque, S D. Burns, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G. Willson
The use of chemically amplified photoresists for the fabrication of sub-100 nm features will require spatial control with nanometer level resolution. To reach this goal, a detailed understanding of the complex reaction-diffusion mechanisms at these length

Reaction Front Induced Roughness in Chemically Amplified Photoresists

August 1, 2002
Author(s)
Vivek Prabhu, Ronald L. Jones, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Christopher Soles, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
We have examined, with tapping mode atomic force microscopy(AFM), the effect of post-exposure bake times and developer on surface roughness using model bilayer interfaces of deuterium-labeled poly(tert-butyloxycarbonyloxy styrene) and poly(hydroxystyrene)

Direct Measurement of the Reaction Front in Chemically Amplified Photoresists

July 1, 2002
Author(s)
Eric K. Lin, Sushil K. Satija, Wen-Li Wu, Christopher L. Soles, D L. Goldfarb, B C. Trinque, S D. Burns, Ronald L. Jones, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, M Angelopoulos, C G. Willson
The continuing drive by the semiconductor industry to fabricate smaller structures with photolithography will soon require dimensional control at length scales, (2 to 5) nm, comparable to the size of the polymeric molecules in the materials used to pattern

Probing Surface and Bulk Chemistry in Resist Films Using Near Edge X-Ray Absorption Fine Structure

May 1, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, Daniel A. Fischer, S Sambasivan, D L. Goldfarb, M Angelopoulos
Control of the shape, critical dimension (CD), and roughness is critical for the fabrication of sub 100 nm features, where the CD and roughness budget are approaching the molecular dimension of the resist polymers. One focus of our research is identifying

Controlling Morphology During Pattern Development in Thin Film Photoresists

February 1, 2002
Author(s)
Ronald L. Jones, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Christopher L. Soles, Wen-Li Wu
We report on attempts to control surface morphology using current lithographic processes critical to the development of both inorganic and organic nano-structures. Bilayers of protected (base insoluble) and deprotected (base soluble) model lithographic

A Combinatorial Methodology to Discovering the Material Factors Controlling Resist Line Edge Roughness, Shape, and Critical Dimension

January 28, 2002
Author(s)
Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Eric K. Lin, Christopher Soles, Wen-Li Wu, D M. Goldfarb, M Angelopoulos
A combinatorial research methodology is discussed to determine the material factors that control line edge roughness (LER), shape, and critical dimension (CD) of developed photo-resist features. The approach involves generating a gradient of processing

Confinement Effects on the Spatial Extent of the Reaction Front in Ultrathin Chemically Amplified Photoresists

December 1, 2001
Author(s)
D L. Goldfarb, M Angelopoulos, Eric K. Lin, Ronald L. Jones, Christopher Soles, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Wen-Li Wu
Sub-100 nm lithography poses strict requirements on photoresist material properties and processing conditions to achieve necessary critical dimension (CD) control of patterned structures. As resist thickness and feature linewidth decrease, fundamental

Thin Film Confinement Effects on the Thermal Properties of Model Photoresist Polymers

December 1, 2001
Author(s)
Christopher L. Soles, Eric K. Lin, Joseph~undefined~undefined~undefined~undefined~undefined Lenhart, Ronald L. Jones, Wen-Li Wu, D L. Goldfarb, M Angelopoulos
The demand to print increasingly smaller microelectronic device features means that the thickness of the polymer films used in the lithographic processes must decrease. The thickness of these films is rapidly approaching the unperturbed dimensions of the