Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization



Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, R Kolb, D Casa, P J. Bolton, G G. Barclay


The characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using Small Angle X-ray Scattering (SAXS). The transmission scattering geometry employed is capable of high throughput measurements with equivalent capabilities for future technology nodes of the semiconductor industry, organic and inorganic nano-scale devices, and 3-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings produced under typical commercial photolithographic imaging conditions. Quantities such as periodicity and line width are extracted in a model independent fashion, while additional parameters and a full line shape extraction are discussed.
Applied Physics Letters
No. 19


nanostructures, photolithography, semiconductor metrology, small angle-xray scattering


Jones, R. , Hu, T. , Lin, E. , Wu, W. , Kolb, R. , Casa, D. , Bolton, P. and Barclay, G. (2003), Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization, Applied Physics Letters, [online], (Accessed June 17, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created November 1, 2003, Updated February 17, 2017