Jones, R.
, Hu, T.
, Lin, E.
, Wu, W.
, Kolb, R.
, Casa, D.
, Bolton, P.
and Barclay, G.
(2003),
Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852166
(Accessed April 26, 2024)
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Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization
Published
Author(s)
, , , , , D Casa, P J. Bolton, G G. Barclay
Abstract
The characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using Small Angle X-ray Scattering (SAXS). The transmission scattering geometry employed is capable of high throughput measurements with equivalent capabilities for future technology nodes of the semiconductor industry, organic and inorganic nano-scale devices, and 3-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings produced under typical commercial photolithographic imaging conditions. Quantities such as periodicity and line width are extracted in a model independent fashion, while additional parameters and a full line shape extraction are discussed.Citation
Applied Physics Letters
Volume
83
Issue
No. 19
Pub Type
Journals
Download Paper
Keywords
nanostructures, photolithography, semiconductor metrology, small angle-xray scattering
Citation
Created November 1, 2003, Updated February 17, 2017