Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization
Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, R Kolb, D Casa, P J. Bolton, G G. Barclay
The characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using Small Angle X-ray Scattering (SAXS). The transmission scattering geometry employed is capable of high throughput measurements with equivalent capabilities for future technology nodes of the semiconductor industry, organic and inorganic nano-scale devices, and 3-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings produced under typical commercial photolithographic imaging conditions. Quantities such as periodicity and line width are extracted in a model independent fashion, while additional parameters and a full line shape extraction are discussed.
nanostructures, photolithography, semiconductor metrology, small angle-xray scattering
, Hu, T.
, Lin, E.
, Wu, W.
, Kolb, R.
, Casa, D.
, Bolton, P.
and Barclay, G.
Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852166
(Accessed November 30, 2023)