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Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization

Published

Author(s)

Ronald L. Jones, T Hu, Eric K. Lin, Wen-Li Wu, R Kolb, D Casa, P J. Bolton, G G. Barclay

Abstract

The characterization of sub-100 nm photolithographic patterns with nanometer scale resolution is demonstrated using Small Angle X-ray Scattering (SAXS). The transmission scattering geometry employed is capable of high throughput measurements with equivalent capabilities for future technology nodes of the semiconductor industry, organic and inorganic nano-scale devices, and 3-dimensional structures. The method is demonstrated through the characterization of a series of polymer photoresist gratings produced under typical commercial photolithographic imaging conditions. Quantities such as periodicity and line width are extracted in a model independent fashion, while additional parameters and a full line shape extraction are discussed.
Citation
Applied Physics Letters
Volume
83
Issue
No. 19

Keywords

nanostructures, photolithography, semiconductor metrology, small angle-xray scattering

Citation

Jones, R. , Hu, T. , Lin, E. , Wu, W. , Kolb, R. , Casa, D. , Bolton, P. and Barclay, G. (2003), Small Angle X-Ray Scattering for Sub-100 nm Pattern Characterization, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=852166 (Accessed June 17, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created November 1, 2003, Updated February 17, 2017