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Search Publications by: Yicheng Wang (Fed)

Displaying 51 - 75 of 139

Larger Value and SI Measurement of the Improved Cryogenic Capacitor for the Electron-Counting Capacitance Standard

April 1, 2003

Author(s)

Neil M. Zimmerman, Mahmoud A. El-Sabbagh, Yicheng Wang

We report on several advances in the development of a cryogenic vacuum-gap capacitor C_cryo, for use with the electron-counting capacitance standard (ECCS). First, we have increased the value by about a factor of ten, to 10 pF; this will both make the ECCS

Surface finish effects on partial discharge with embedded electrodes

January 1, 2003

Author(s)

Aleta T. Wilder, Robert E. Hebner, Yicheng Wang

Partial discharge measurements have been used to characterize the response of dielectric insulation materials exposed to ac voltages. Electrode surface finish can affect such partial discharge characteristics. This paper provides comparisons to the effect

Improved Cryogenic Capacitor for the ECCS: Larger Value (10 pF) and SI Measurement by Tuning the Calculable Capacitor

September 4, 2002

Author(s)

Neil M. Zimmerman, Mahmoud A. El-Sabbagh, Yicheng Wang

We report on several advances in the development of a cryogenic vacuum-gap capacitor C cryo, for use with the electron-counting cpacitance standard (ECCS). First, we have increased the value by about a factor of ten, to 10pF; this will both make the ECCS

Electron Drift in C4F6 and C4F6/Ar Mixtures

September 1, 2002

Author(s)

Amanda N. Goyettes, Yicheng Wang, Gerald FitzPatrick

We report measurements of electron drift velocities as a function of density-reduced electric field, w(E/N), for hexafluorobutadiene (C4F6) and mixtures of C4F6 with Ar. The w(E/N) for the mixtures of C4F6 with Ar can aid Boltzmann transport equation

Measurements and modeling of ion energy distribution in high-density, radio-frequency biased CF4 discharges

May 1, 2002

Author(s)

Mark A. Sobolewski, Yicheng Wang, Amanda N. Goyettes

Measurements and Modeling of Ion Energy Distributions in High-Density, Radio-Frequency Biased CF 4 Discharges

May 1, 2002

Author(s)

Mark A. Sobolewski, Yicheng Wang, A N. Goyette

Models of ion dynamics in radio-frequency (rf) biased, high-density plasma sheaths are needed to predict ion bombardment energies in plasma simulations. To test these models, we have measured ion energy distributions (IEDs) in pure CF 4 discharges at 1.33

Rate Constants for Unimolecular Decomposition of SF 6 -

November 21, 2001

Author(s)

Yicheng Wang, R. Champion, I. V. Dyakov, B. Peko

Insulating gas mixtures containing SF 6 have been promoted to serve as replacements for pure SF 6 in order to reduce SF 6 atmospheric emission. It has been argued that some synergism may be achieved by choosing proper buffer gases in mixtures with SF 6

Collisional Decomposition of Sulfur Hexaflouride Anion (SF-6)

July 1, 2001

Author(s)

R. Champion, I. V. Dyakov, B. Peko, Yicheng Wang

Electron, Transport, Ionization and Attachment Coefficients in C2F4 and C2F4/Ar Mixtures

July 1, 2001

Author(s)

Amanda N. Goyettes, G. de Hann, Yicheng Wang, Loucas G. Christophorou, James K. Olthoff

Ion Compositions and Energies in Inductively Coupled Plasmas Containing SF6

July 1, 2001

Author(s)

Amanda N. Goyettes, Yicheng Wang, James K. Olthoff

Electron Transport, Ionization, and Attachment Coefficients in C 2 F 4 and C 2 F 4 /Ar Mixtures

May 1, 2001

Author(s)

Amanda N. Goyettes, G. de Hann, Yicheng Wang, Loucas G. Christophorou, James K. Olthoff

This is a summary report of the paper to be published in the Journal of Chemical Physics. Measurements of electron transport, effective ionization, and attachment coefficients are reported for C 2F 4. In addition, measurements of the electron drift

Comparison of the Identities, Fluxes, and Energies of Ions Formed in High Density Fluorocarbon Discharges

January 1, 2001

Author(s)

Amanda N. Goyettes, Yicheng Wang, James K. Olthoff

Positive ion bombardment plays an essential role in plasma processing, influencing etch rates, materials selectivity and etching profiles. Experimental determination of ion identities and energies in processing plasmas provides complementary data necessary

Ion Fluxes and Energies in Inductively Coupled Radio-Frequency Discharges Containing C 2 F 6 and c-C 4 F 8

November 1, 2000

Author(s)

Yicheng Wang, Martin Misakian, Amanda N. Goyettes, James K. Olthoff

We report ion energy distributions (IEDs), relative ion intensities, and absolute total ion current densities at the grounded electrode of an inductively coupled Gaseous Electronics Conference radio-frequency (rf) reference cell for discharges generated in