Sobolewski, M.
, Olthoff, J.
and Wang, Y.
(1999),
Ion Energy Distributions and Sheath Voltages in Radio-Frequency-Biased, Inductively-Coupled, High-Density Plasma Reactor, Journal of Applied Physics (Accessed May 12, 2026)
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Ion Energy Distributions and Sheath Voltages in Radio-Frequency-Biased, Inductively-Coupled, High-Density Plasma Reactor
Published
Author(s)
, ,
Abstract
Ion energy distributions were measured at a grounded surface in an inductively-coupled, high-density plasma reactor for pure argon, argon-helium, and argon-xenon discharges at 1.33 Pa (10 mTorr), as a function of radio-frequency (rf) bias amplitude, rf bias frequency, radial position, inductive source power, and ion mass. The ground sheath voltage which accelerates the ions was also determined using capacitive probe measurements and Langmuir probe data. Together, the measurements provide a complete characterization of ion dynamics in the sheath, allowing ion transit time effects to be distinguished from sheath impedance effects. Models are presented which describe both effects and explain why they are observed in the same range of rf bias frequency.Citation
Journal of Applied Physics
Volume
85
Issue
No. 8
Pub Type
Journals
Keywords
discharge, high-density plasma, ion energy, model, plasma, radio frequency, sheath, voltage
Citation
Issues
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Created April 1, 1999, Updated February 17, 2017