December 1, 2002
Author(s)
D C. Look, R L. Jones, X L. Sun, L J. Brillson, J W. Ager, S S. Park, J H. Han, R J. Molnar, James E. Maslar
Hall-effect, photoluminescence (PL), cathodoluminescence (CL), and Raman scattering measurements have been used to characterize the Ga (top) and N (bottom) faces of freestanding GaN layers grown by hydride vapor phase epitaxy on Al2O3. The material near