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Electrical and Optical Properties of GaN/Al2O3 Interfaces

Published

Author(s)

D C. Look, R L. Jones, X L. Sun, L J. Brillson, J W. Ager, S S. Park, J H. Han, R J. Molnar, James E. Maslar

Abstract

Hall-effect, photoluminescence (PL), cathodoluminescence (CL), and Raman scattering measurements have been used to characterize the Ga (top) and N (bottom) faces of freestanding GaN layers grown by hydride vapor phase epitaxy on Al2O3. The material near the bottom has higher carrier concentration, lower mobility, larger PL linewidths, brighter CL emission, and stronger Raman plasmon-phonon lines than the material near the top. All results are consistent with the diffusion of O from the Al2O3 substrate, sometimes covering a distance of several tens of micrometers. The O donor is compensated by Ga-vacancy acceptors, known to exist from positron annihilation experiments. However, Raman and CL profiling show that the poor interface region ends rather abruptly, giving excellent material near the top (Ga) face.
Citation
Journal of Physics C-Solid State Physics
Volume
14
Issue
No. 48

Keywords

cathodoluminescence (CL), photoluminescence (PL), Raman scattering measurements

Citation

Look, D. , Jones, R. , Sun, X. , Brillson, L. , Ager, J. , Park, S. , Han, J. , Molnar, R. and Maslar, J. (2002), Electrical and Optical Properties of GaN/Al<sub>2</sub>O<sub>3</sub> Interfaces, Journal of Physics C-Solid State Physics (Accessed July 13, 2024)

Issues

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Created November 30, 2002, Updated October 12, 2021