Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Electrical and Optical Properties of GaN/Al2O3 Interfaces



D C. Look, R L. Jones, X L. Sun, L J. Brillson, J W. Ager, S S. Park, J H. Han, R J. Molnar, James E. Maslar


Hall-effect, photoluminescence (PL), cathodoluminescence (CL), and Raman scattering measurements have been used to characterize the Ga (top) and N (bottom) faces of freestanding GaN layers grown by hydride vapor phase epitaxy on Al2O3. The material near the bottom has higher carrier concentration, lower mobility, larger PL linewidths, brighter CL emission, and stronger Raman plasmon-phonon lines than the material near the top. All results are consistent with the diffusion of O from the Al2O3 substrate, sometimes covering a distance of several tens of micrometers. The O donor is compensated by Ga-vacancy acceptors, known to exist from positron annihilation experiments. However, Raman and CL profiling show that the poor interface region ends rather abruptly, giving excellent material near the top (Ga) face.
Journal of Physics C-Solid State Physics
No. 48


cathodoluminescence (CL), photoluminescence (PL), Raman scattering measurements


Look, D. , Jones, R. , Sun, X. , Brillson, L. , Ager, J. , Park, S. , Han, J. , Molnar, R. and Maslar, J. (2002), Electrical and Optical Properties of GaN/Al<sub>2</sub>O<sub>3</sub> Interfaces, Journal of Physics C-Solid State Physics (Accessed July 13, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created November 30, 2002, Updated October 12, 2021