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Non-Intrusive Optical Measurements of Gas and Surface Temperatures in Hostile Environments Using Raman Spectroscopy

Published

Author(s)

James E. Maslar, Wilbur S. Hurst

Abstract

The control and elimination of gas-phase-generated microcontaminants in thermal chemical vapor deposition (CVD) reactors is an increasingly important issue as semiconductor device critical dimensions continue to shrink. In an effort to better understand the chemistry and physics of microcontaminant generation and transport in thermal CVD reactors, detailed aerosol physics modeling (including microcontaminant formation, transport, and growth) and experimental measurements in a well-characterized CVD reactor both are being carried out at NIST. Knowledge of the gas, the wafer, and ther reactor wall temperatures is vital for the verification of the microcontaminant model NIST is developing.
Citation
Non-Intrusive Optical Measurements of Gas and Surface Temperatures in Hostile Environments Using Raman Spectroscopy

Keywords

chemical vapor deposition reactors, CVD, gas temperatures, microcontaminants, Raman spectroscopy, semiconductors, surface temperatures, thermal CVD reactors

Citation

Maslar, J. and Hurst, W. (2001), Non-Intrusive Optical Measurements of Gas and Surface Temperatures in Hostile Environments Using Raman Spectroscopy, Non-Intrusive Optical Measurements of Gas and Surface Temperatures in Hostile Environments Using Raman Spectroscopy (Accessed July 13, 2024)

Issues

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Created February 1, 2001, Updated February 17, 2017