In Situ Raman Spectroscopic Characterization of Compound Semiconductor Free Carrier Concentration
James E. Maslar, C Wang, D C. Oakley
Free carrier concentrations in compound semiconductors were determined using Raman spectroscopy. Spectra of selected films were recorded in situ in a chemical vapor deposition reactor operating from room temperature to growth temperature.
Technical Digest of IEEE/LEOS 2000 Summer Topics Meetings
July 24-28, 2000
Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers).
chemical vapor deposition, compound semiconductors, raman spectroscopy
, Wang, C.
and Oakley, D.
In Situ Raman Spectroscopic Characterization of Compound Semiconductor Free Carrier Concentration, Technical Digest of IEEE/LEOS 2000 Summer Topics Meetings
(Accessed December 11, 2023)