In Situ Gas Phase Optical Measurements of Silane Decomposition in a Thermal Chemical Vapor Deposition Reactor

Published

March 1, 2001

Author(s)

James E. Maslar, R W. Davis, Elizabeth F. Moore, Donald R. Burgess Jr., D M. Kremer, S H. Ehrman

Abstract

Gas phase processes occurring during silicon chemical vapor deposition via silane thermal decomposition were investigated. Raman spectroscopy was utilized to measure gas phase temperatures and species concentrations while elastic light scattering was utilized to probe gas phase particle nucleation and transport. The process parameters investigated were a substrate temperature of 1100 K, a chamber pressure of 26.7 kPa (200 torr), a gas flow rate of 19 slpm, and substrate rotation rates of 500 rpm and 1000 rpm. Strong correlation between gas phase temperature and silane concentration and particle light scattering profiles were clearly observed.

Proceedings Title

Electrochemical Society, Meeting | 199th | | Electrochemical Society

Volume

2001-1

Conference Dates

March 1, 2001

Conference Title

Electrochemical Society

Pub Type

Conferences

Keywords

chemical vapor deposition, in situ optical spectroscopy, Raman spectroscopy, silicon deposition

Citation

Maslar, J. , Davis, R. , Moore, E. , Burgess, D. , Kremer, D. and Ehrman, S. (2001), In Situ Gas Phase Optical Measurements of Silane Decomposition in a Thermal Chemical Vapor Deposition Reactor, Electrochemical Society, Meeting | 199th | | Electrochemical Society (Accessed October 8, 2025)