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Search Publications by: Richard M. Silver (Fed)

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Displaying 176 - 200 of 307

Extending the Limits of Image-Based Optical Metrology

June 20, 2007
Author(s)
Richard M. Silver, Bryan M. Barnes, Ravikiran Attota, Jay S. Jun, Michael T. Stocker, Egon Marx, Heather J. Patrick
We have developed a set of techniques, referred to as scatterfield microscopy, in which the illumination is engineered in combination with appropriately designed metrology targets. Previously we reported results from samples with sub-50 nm sized features

Zero-Order Imaging of Device-Sized Overlay Targets Using Scatterfield Microscopy

March 1, 2007
Author(s)
Bryan M. Barnes, Lowell P. Howard, P Lipscomb, Richard M. Silver
Patterns of lines and trenches with nominal linewidths of 50 nm have been proposed for use as an overlay target appropriate for placement inside the patterned wafer die. The NIST Scatterfield Targets feature groupings of eight lines and/or trenches which

A Time-Resolved Kinetic Monte-Carlo Simulation Study On Si (111) Etching

January 1, 2007
Author(s)
Hui Zhou, Joseph Fu, Richard M. Silver
In this paper we have extended the Kinetic Monte-Carlo simulation method to study the etching dynamics of Si (111) surfaces in NH4F in a time-resolved basis. We have examined the step-flow dynamics of Si(111) etching using various simulation window sizes

Calibrated Overlay Wafer Standard

January 1, 2007
Author(s)
Michael T. Stocker, Richard M. Silver, Ravikiran Attota, Jay S. Jun
This document describes the physical characteristics of Standard Reference Material SRM 5000, provides guidance for its use in calibrating overlay (OL) tools, and gives information and precautions concerning its care and handling.Standard Reference

Fundamental Limits of Optical Critical Dimension Metrology: A Simulation Study

January 1, 2007
Author(s)
Richard M. Silver, Thomas A. Germer, Ravikiran Attota, Bryan M. Barnes, B Bunday, J Allgair, Egon Marx, Jay S. Jun
This paper is a comprehensive summary and analysis of a SEMATECH funded project to study the limits of optical critical dimension scatterometry. The project was focused on two primary elements: 1) the comparison, stability, and validity of industry models

Advanced Metrology Needs for Nanoelectronics Lithography

October 1, 2006
Author(s)
Stephen Knight, Ronald Dixon, Ronald L. Jones, Eric Lin, Ndubuisi G. Orji, Richard M. Silver, Andras Vladar, Wen-li Wu
The semiconductor industry has exploited productivity improvements through aggressive feature size reduction for over four decades. While enormous effort has been expended in developing the optical lithography tools to print ever finer features

Illumination Optimization for Optical Semiconductor Metrology

September 1, 2006
Author(s)
Bryan M. Barnes, L Howard, Richard M. Silver
Uniform sample illumination via K hler illumination, is achieved by establishing a pair of conjugate focal planes; a light source is focused onto the condenser lens aperture while the image of the field aperture is focused at the plane of the specimen

Damping mechanisms for precision applications in UHV environment

May 1, 2006
Author(s)
Sumanth B. Chikkamaranahalli, R. R. Vallance, Bradley N. Damazo, Richard M. Silver
Surface analysis techniques such as scanning probe microscopy (SPM) have undergone significant advances and are attractive for application to electron and optical devices such as micro lenses, vacuum tubes, electron tubes, etc. For surface stability

Koehler Illumination for High-Resolution Optical Metrology

March 1, 2006
Author(s)
Martin Y. Sohn, Bryan M. Barnes, Lowell P. Howard, Richard M. Silver, Ravikiran Attota, Michael T. Stocker
Accurate preparation of illumination is critical for high-resolution optical metrology applications such as line width and overlay measurements. To improve the detailed evaluation and alignment of the illumination optics, we have separated Koehler

The Limits of Image-Based Optical Metrology

March 1, 2006
Author(s)
Richard M. Silver, Bryan M. Barnes, Ravikiran Attota, Jay S. Jun, James J. Filliben, Juan Soto, Michael T. Stocker, P Lipscomb, Egon Marx, Heather J. Patrick, Ronald G. Dixson, Robert D. Larrabee
An overview of the challenges encountered in imaging device-sized features using optical techniques recently developed in our laboratories is presented in this paper. We have developed a set of techniques we refer to as scatterfield microscopy which allows