Model-Based Analysis of the Limits of Optical Metrology With Experimental Comparisons

Published

June 18, 2007

Author(s)

Richard M. Silver, Ravikiran Attota, Egon Marx

Abstract

This paper presents a summary and analysis of a study on optical modeling for critical dimension metrology. The paper is focused on two primary elements: 1) the comparison, stability, and validity of multiple electromagnetic scattering models and 2) a series of model-to-experiment comparisons. A part of the study will cover improved model-to-theory agreement obtained using our new Scatterfield microscopy technique, which has enabled evaluation of previous unquantified errors. The Scatterfield microscopy technique allows us to step or scan an aperture in a conjugate back focal plane of the objective lens enabling illumination of a narrow cone of incident plane waves at a given primary angle of incidence. A series of angle resolved images or intensity data can be obtained for each angle of illumination.

Proceedings Title

Proceedings of SPIE

Volume

6617

Conference Dates

January 1, 2007

Conference Location

Munich, GE

Conference Title

Modeling Aspects in Optical Metrology

Pub Type

Conferences

Keywords

background normalization, CCD camera, diffraction, higher order, optics, scatterfield, zero order

Citation

Silver, R. , Attota, R. and Marx, E. (2007), Model-Based Analysis of the Limits of Optical Metrology With Experimental Comparisons, Proceedings of SPIE, Munich, GE (Accessed June 2, 2023)