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Model-Based Analysis of the Limits of Optical Metrology With Experimental Comparisons



Richard M. Silver, Ravikiran Attota, Egon Marx


This paper presents a summary and analysis of a study on optical modeling for critical dimension metrology. The paper is focused on two primary elements: 1) the comparison, stability, and validity of multiple electromagnetic scattering models and 2) a series of model-to-experiment comparisons. A part of the study will cover improved model-to-theory agreement obtained using our new Scatterfield microscopy technique, which has enabled evaluation of previous unquantified errors. The Scatterfield microscopy technique allows us to step or scan an aperture in a conjugate back focal plane of the objective lens enabling illumination of a narrow cone of incident plane waves at a given primary angle of incidence. A series of angle resolved images or intensity data can be obtained for each angle of illumination.
Proceedings Title
Proceedings of SPIE
Conference Dates
January 1, 2007
Conference Location
Munich, GE
Conference Title
Modeling Aspects in Optical Metrology


background normalization, CCD camera, diffraction, higher order, optics, scatterfield, zero order


Silver, R. , Attota, R. and Marx, E. (2007), Model-Based Analysis of the Limits of Optical Metrology With Experimental Comparisons, Proceedings of SPIE, Munich, GE (Accessed April 13, 2024)
Created June 18, 2007, Updated February 19, 2017