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Search Publications by: Richard M. Silver (Fed)

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Displaying 201 - 225 of 307

The Limits of Image-Based Optical Metrology

March 1, 2006
Author(s)
Richard M. Silver, Bryan M. Barnes, Ravikiran Attota, Jay S. Jun, James J. Filliben, Juan Soto, Michael T. Stocker, P Lipscomb, Egon Marx, Heather J. Patrick, Ronald G. Dixson, Robert D. Larrabee
An overview of the challenges encountered in imaging device-sized features using optical techniques recently developed in our laboratories is presented in this paper. We have developed a set of techniques we refer to as scatterfield microscopy which allows

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calib Standards With a Calibrated AFM at NIST

September 29, 2005
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, Edwin R. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Dynamic Modeling and Vibration Analysis of a UHV Scanning Tunneling

August 17, 2005
Author(s)
Sumanth B. Chikkamaranahalli, R. R. Vallance, Bradley N. Damazo, Richard M. Silver, James D. Gilsinn
Techniques based on scanning probe microscopy (SPM) are used to fabricate surface structures with dimensions ranging from 10 - 100mm. These structures have been fabricated and imaged using a scanning tunneling microscope (STM), and the STM requires the tip

High-resolution Optical Metrology

May 1, 2005
Author(s)
Richard M. Silver, Ravikiran Attota, Michael T. Stocker, M R. Bishop, Lowell P. Howard, Thomas A. Germer, Egon Marx, M P. Davidson, Robert D. Larrabee
Recent advances in optical imaging techniques have unveiled new possibilities for optical metrology and optical-based process control measurements of features in the 65 nm node and beyond. In this paper we discuss methods and applications that combine

Photomask Metrology, Photomask Fabrication Technology

January 1, 2005
Author(s)
Richard M. Silver, Andras Vladar
In this paper we will focus on the different metrology techniques used to measure features on photomasks. In view of the above discussion, we will focus on the importance of accurately measuring features and developing traceability. The metrology

The Influence of Defects on the Morphology of Si (111) Etched in NHF

January 1, 2005
Author(s)
Hui Zhou, Joseph Fu, Richard M. Silver
We have implemented a kinetic Monte-Carlo (KMC) simulation to study the morphologies of Si (111) surfaces etched in NHF. Although our initial simulations reproduced the previous results from Hines, it failed to produce the morphologies observed in our

Evaluation of New In-Chip and Arrayed Line Overlay Target Designs

May 24, 2004
Author(s)
M P. Davidson, M R. Bishop, Robert D. Larrabee, Michael T. Stocker, Jay S. Jun, Egon Marx, Richard M. Silver, Ravikiran Attota
Two types of overlay targets have been designed and evaluated for the study of optical overlay metrology. They are in-chip and arrayed overlay targets. In-chip targets are three-bar two-level targets designed to be placed in or near the active device area

Evaluation of New In-Chip and Arrayed Line Overlay

May 1, 2004
Author(s)
Ravikiran Attota, Richard M. Silver, M R. Bishop, Egon Marx, Jay S. Jun, Michael T. Stocker, M P. Davidson, Robert D. Larrabee
Two types of overlay targets have been designed and evaluated for the study of optical overlay metrology. They are in-chip and arrayed overlay targets. In-chip targets are three-bar two-level targets designed to be placed in or near the active device area

High-Resolution Optical Overlay Metrology

May 1, 2004
Author(s)
Richard M. Silver, Ravikiran Attota, M R. Bishop, Jay S. Jun, Egon Marx, M P. Davidson, Robert D. Larrabee
Optical methods are often thought to lose their effectiveness as a metrology tool beyond the Rayleigh criterion. However, using advanced modeling methods, the conventional resolution limitations encountered in well-defined edge-to-edge measurements using

Improving the Uncertainty of Photomask Linewidth Measurements

May 1, 2004
Author(s)
J Pedulla, James E. Potzick, Richard M. Silver
The National Institute of Standards and Technology (NIST) is currently developing a photomask linewidth standard (SRM 2059) with a lower expected uncertainty of calibration than the previous NIST standards (SRMs 473, 475, 476). In calibrating these

Nano-Lithography in Ultra-High Vacuum (UHV) for Real World Applications

March 11, 2004
Author(s)
James D. Gilsinn, Hui Zhou, Bradley N. Damazo, Joseph Fu, Richard M. Silver
As nano-lithography technology improves, more companies and research groups have the capability to create nano-scale structures. Scanning tunneling microscopes (STMs) are commonly used to create these structures and evaluate them afterward. One difficulty