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Search Publications by: Richard M. Silver (Fed)

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Displaying 151 - 175 of 307

Traceability: The Key to Nanomanufacturing

December 30, 2009
Author(s)
Ndubuisi George Orji, Ronald G. Dixson, Bryan Barnes, Richard M. Silver
Over the last few years key advances have been made in the area of nanomanufacturing and nanofabrication. Several researchers have produced nanostructures using either top-down or bottom-up techniques, while other groups have functionalized such structures

NIST SRM (Standard Reference Material) 2460/2461 Standard Bullets and Casings Project

October 13, 2009
Author(s)
Jun-Feng Song, Thomas Brian Renegar, Xiaoyu Alan Zheng, Robert M. Thompson, Richard M. Silver, Martin M. Ols, Ted T. Vorburger
The National Institute of Standards and Technology (NIST) in collaboration with the Bureau of Alcohol, Tobacco, Firearms, and Explosives (ATF) has developed the Standard Reference Material (SRM) 2460 Bullets and 2461 Cartridge Cases. NIST has also

Photomask metrology using a 193 nm scatterfield microscope

September 30, 2009
Author(s)
Richard Quintanilha, Bryan M. Barnes, Martin Y. Sohn, Lowell P. Howard, Richard M. Silver, James E. Potzick, Michael T. Stocker
The current photomask linewidth Standard Reference Material (SRM) supplied by the National Institute of Standards and Technology (NIST), SRM 2059, is the fifth generation of such standards for mask metrology. The calibration of this mask has been usually

193 nm Angle-Resolved Scatterfield Microscope for Semiconductor Metrology

August 24, 2009
Author(s)
Martin Y. Sohn, Richard Quintanilha, Bryan M. Barnes, Richard M. Silver
An angle-resolved scatterfield microscope (ARSM( feating 193 nm excimer laser light wa developed for measuring critical dimension (CD) and overlay of nanoscale targets as used in semiconductor metrology. The microscope is designed to have a wide and

Angle-resolved Optical Metrology using Multi-Technique Nested Uncertainties

August 15, 2009
Author(s)
Richard M. Silver, Bryan M. Barnes, Hui Zhou, Nien F. Zhang, Ronald G. Dixson
This paper introduces recent advances in scatterfield microscopy using improved normalization and fitting procedures. Reduced measurement uncertainties are obtained through the use of more accurate normalization procedures in combination with better

Developing an Uncertainty Analysis for Optical Scatterometry

August 3, 2009
Author(s)
Thomas A. Germer, Heather J. Patrick, Richard M. Silver, Benjamin Bunday
This article describes how an uncertainty analysis may be performed on a scatterometry measurement. A method is outlined for propagating uncertainties through a least-squares regression. The method includes the propagation of the measurement noise as well

Nanoscale Measurements with a Through-Focus Scanning-Optical-Microscope

July 15, 2009
Author(s)
Ravikiran Attota, Richard M. Silver, Thomas A. Germer
We present a novel optical technique that produces nanometer dimensional measurement sensitivity using a conventional optical microscope, by analyzing through-focus scanning-optical-microscope (TSOM) images obtained at different focus positions. In

Scatterfield Optical Imaging for sub-10 nm Dimensional Metrology

January 1, 2009
Author(s)
Richard M. Silver
Recent developments in optical microscopy promise to advance optical metrology and imaging to unprecedented levels through theoretical and experimental development of a new measurement technique called "scatterfield optical imaging". ". Current metrology

Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis

September 1, 2008
Author(s)
Ravikiran Attota, Michael T. Stocker, Richard M. Silver, Nathanael A. Heckert, Hui Zhou, Richard J. Kasica, Lei Chen, Ronald G. Dixson, Ndubuisi G. Orji, Bryan M. Barnes, Peter Lipscomb
In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They are

Optical Critical Dimension Measurement of Silicon Grating Targets Using Back Focal Plane Scatterfield Microscopy

January 2, 2008
Author(s)
Heather J. Patrick, Ravikiran Attota, Bryan M. Barnes, Thomas A. Germer, Michael T. Stocker, Richard M. Silver, Michael R. Bishop
We demonstrate optical critical dimension measurement of lines in silicon grating targets using back focal plane scatterfield microscopy. In this technique, angle-resolved diffraction signatures are obtained from grating targets by imaging the back focal

Line Width Measurement Technique Using Through-Focus Optical Images

January 1, 2008
Author(s)
Ravikiran Attota, Richard M. Silver, Ronald G. Dixson
We present a detailed experimental study of a new through-focus technique to measure line width (CD) with nanometer sensitivity using a bright field optical microscope. This method relies on analyzing intensity gradients in optical images at different