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Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions

Published

Author(s)

H. W. Tseng, John A. Dagata, Richard M. Silver, Joseph Fu, J R. Lowney

Abstract

Scanning tunneling microscopy (STM) and atomic force microscopy operating in air have been used to investigate locations of molecular-beam epitaxially grown GaAs multiple pn junctions cleaved and passivated with P(2)S(5). Symmetrically and asymmetrically doped junctions were prepared within topographically delineated AlAs/GaAs marker regions for this in-air study of electronic junction contrast. Our results indicate that the STM-delineated junction locations do not coincide with the electrical junction locations, but rather shift into the p-type regions.
Citation
Journal Vacuum Science Technology B
Volume
12(1)

Citation

Tseng, H. , Dagata, J. , Silver, R. , Fu, J. and Lowney, J. (1993), Junction Locations by Scanning Tunneling Microscopy: In-Air-Ambient Investigation of Passivated GaAs pn Junctions, Journal Vacuum Science Technology B (Accessed May 20, 2024)

Issues

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Created September 4, 1993, Updated October 12, 2021