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Displaying 51 - 75 of 88

Surface Effects on the Elastic Modulus of Te Nanowires

June 17, 2008
Author(s)
Gheorghe Stan, Sergiy Krylyuk, Albert Davydov, Mark D. Vaudin, Leonid A. Bendersky, Robert F. Cook
Nondestructive elastic property measurements have been performed on Te nanowires with diameters in the range 20 150 nm. By using contact resonance atomic force microscopy, the elastic indentation modulus perpendicular to the prismatic facets of the

Dependence of Exchange Coupling Interaction on Micromagnetic Constants in Hard/Soft Magnetic Bilayer Systems

September 1, 2007
Author(s)
Antonio Zambano, Hiroyuki Oguchi, Ichiro Takeuchi, Y W. Choi, J.S. Jiang, J P. Liu, S E. Lofland, Daniel Josell, Leonid A. Bendersky
To elucidate the dependence of exchange coupling behavior of hard/soft magnetic bilayer systems on various micromagnetic constants, the coupling length and the nucleation field (H (superscript_N)) were systematically measured on five thin film libraries

Whisker & Hillock Formation on Sn, Sn-Cu and Sn-Pb Electrodeposits

November 11, 2005
Author(s)
William J. Boettinger, C E. Johnson, Leonid A. Bendersky, Kil-Won Moon, Maureen E. Williams, Gery R. Stafford
Bright Sn, Sn-Cu and Sn-Pb layers, 3, 7 and 16 mm thick were electrodeposited on phosphor bronze cantilever beams in a rotating disk apparatus. Over a period of several days, Sn-Cu deposits develop 50 mm contorted hillocks and 200 mm whiskers, pure Sn

Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN

June 1, 2004
Author(s)
Albert Davydov, Leonid A. Bendersky, William J. Boettinger, Daniel Josell, Mark D. Vaudin, C S. Chang, Ichiro Takeuchi
A combinatorial library of Au/Ni metalizations on GaN were microstructurally characterized by x-ray diffraction (XRD), electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). The array of single- and bi-layered metal elements

Interfacial Reactions of Ti/n-GaN Contacts at Elevated Temperature

July 1, 2003
Author(s)
C J. Lu, Albert Davydov, Daniel Josell, Leonid A. Bendersky
Interfacial reactions in Ti/GaN contacts have been studied using conventional and high-resolution transmission electron microscopy (TEM), energy-filtered TEM (EFTEM) and X-ray diffraction. The thin film contacts were fabricated by evaporating Ti on n-GaN

Fabrication and Characterization of In-Situ Grown Epitaxial Ba 1-x Sr x Ti0 3 ) Composition Spreads

July 1, 2002
Author(s)
K S. Chang, M A. Aronova, O Famodu, Jason Hattrick-Simpers, S E. Lofland, Ichiro Takeuchi, C J. Lu, Leonid A. Bendersky, H C. Chang
We have used our combinatorial pulsed laser deposition system to in-situ fabricate epitaxial Ba(sub1-x)Sr(sub x)Ti)(sub 3) thin film composition spreads on (100) LaAl0(sub3) substrates. Multimode quantitative microwave microscopy was used to perform

High Throughput Methods for Materials R&D: A Growing Effort at NIST

April 1, 2002
Author(s)
Leonid A. Bendersky, J D. Hewes
The U.S. private sector has indicated that the National Institute of Standards and Technology has a role to play in facilitating the implementation of high throughput experimentation, for example using combinatorial methods. The Advanced Technology Program

Electron Diffraction Using Transmission Electron Microscopy

November 1, 2001
Author(s)
Leonid A. Bendersky, Frank W. Gayle
Electron diffraction via the transmission electron microscope is a powerful method for characterizing the structure of materials, including perfect crystals and defect structures. The advantages of electron diffraction over other methods, e.g., x-ray or