Dissociation and Evolution of Threading Dislocations in Epitaxial Ba0.3Sr0.7Ti03 Thin Films Grown on (001) LaA103

Published

January 1, 2003

Author(s)

C J. Lu, Leonid A. Bendersky, K S. Chang, Ichiro Takeuchi

Abstract

The defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 (BSTO) film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The dominant defects in the film are edge-type threading dislocations (TDs) with Burgers vectors b = and . Pure-screw TDs and partial TDs with mixed character were also observed. A rapid reduction of defect density occurred after the growth of the first 100 nm BSTO adjacent to the interface. In the top layer of the film, all TDs with b = are perfect while those with b = usually are dissociated into two partials with a small separation. In the near-interface layer of the film, however, many TDs with b = split into two or three partials. A high density of extended stacking faults with displacement vectors of types were observed. The stacking faults are associated with dissociated dislocations and partial halfloops. The mechanisms for the generation, dissociation and evolution of the TDs are discussed.

Citation

Journal of Applied Physics

Volume

93 No. 1

Pub Type

Journals

Keywords

Ba0.3Sr0.7Ti03, dislocation dissociation, HREM, stacking fault, TEM, thin film, threading dislocation

Citation

Lu, C. , Bendersky, L. , Chang, K. and Takeuchi, I. (2003), Dissociation and Evolution of Threading Dislocations in Epitaxial Ba_0.3Sr_0.7Ti0₃ Thin Films Grown on (001) LaA10₃, Journal of Applied Physics (Accessed September 11, 2024)