High-Resolution Identifications of 1/2 Stacking Faults in Epitaxial Ba0.3 Sr0.7 Ti03 Thin Films

Published

May 1, 2003

Author(s)

C J. Lu, Leonid A. Bendersky, K S. Chang, Ichiro Takeuchi

Abstract

The near-interface region of an epitaxial Ba _0.3 Sr_0.7Ti0₃ thin film grows on (001) LaA10₃ was studied using transmission electron microscopy. The region was found to consist of a high density of 1/2 stacking faults bounded by partial dislocations. The stacking faults can extend over a large distance (>50 nm). Various possible atomic configurations of the faults were considered. The atomic structures of the faults were identified using high-resolution electron microscopy and simulation as well as energy-filtered imaging. The 1/2 [110] and 1/2 [101] faults ([001] is normal to the film plane) were found to lie predominately on the {100} and {110} planes. The 1/2 [101] faults on (010), (110) or (110) have never been observed before in perovskites. Switching of displacement vectors along the same fault was frequently observed. The stacking faults on {100} have a structure consisting of a double layer of edge-sharing Ti0₆ octahedra. The excess of Ti was detected by energy-filtered imaging. A small amount of excess titanium during the film deposition was found to favor the formation of the extended stacking faults, which was also enhanced by the misfit-induced compressive strain in the early stages of the film growth.

Citation

High-Resolution Identifications of 1/2 <110> Stacking Faults in Epitaxial Ba_0.3 Sr_0.7 Ti0₃ Thin Films

Volume

83

Issue

No. 13

Pub Type

Others

Keywords

(Ba, Sr)Ti0(sub3), atomic structure, dislocation, energy-filtered imaging, HREm, stacking fault, TEM, thin film

Citation

Lu, C. , Bendersky, L. , Chang, K. and Takeuchi, I. (2003), High-Resolution Identifications of 1/2 <110> Stacking Faults in Epitaxial Ba_0.3 Sr_0.7 Ti0₃ Thin Films, High-Resolution Identifications of 1/2 <110> Stacking Faults in Epitaxial Ba_0.3 Sr_0.7 Ti0₃ Thin Films (Accessed October 8, 2025)