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Displaying 2401 - 2425 of 2724

Metrological Timelines in Traceability

January 1, 1998
Author(s)
S D. Rasberry, Charles D. Ehrlich
Current developments and applications in the field of metrology have increased the need for correct and appropriate usage of the terms and concepts related to measurement traceability. Besides traceability itself, some of the interrelated terms include

NIST Microform Calibration - How It Benefits U.S. Industry

January 1, 1998
Author(s)
Jun-Feng Song, Theodore V. Vorburger
In microform metrology, complex 3-D surface features in the micrometer range must be quantified for their space and size including dimensions, curves, angles, profile deviations, and alignment errors, as well as surface roughness with measure uncertainties

Pixel Based Absolute Topography Test for Three Flats

January 1, 1998
Author(s)
R E. Parks, Lianzhen Shao, Christopher J. Evans
We demonstrate a new method of performing the absolute three flat test using reflection symmetries of the surfaces and an algorithm for generating the rotation of arrays of pixel data. Most of the operations involve left/right and top/bottom flips of data

Rapidly Renewable Lap: Theory and Practice

January 1, 1998
Author(s)
Christopher J. Evans, R E. Parks, David J. Roderick, Michael L. McGlauflin
The rapidly renewable lap (RRL) uses a textured substrate over which thin films are slumped. The substrate provides the geometry of the lap and a localized texture, depending on the film thickness, properties, and means by which it is deformed over and

Scanning Electron Microscope Length Standards (Chapter VII in: Benchmarking the Length Measurement Capabilities of the National Institute of Standards and Technology, R.M. Silver, J.L. Land, Editors, NISTIR 6036)

January 1, 1998
Author(s)
Michael T. Postek, Joseph Fu
A cross-section of length measurement capabilities fiom the Precision Engineering Division within the National Institute of Standards and Technology is benchmarked against those of other leading National Measurement Institutes. We present a variety of

Technical Directions of the NIST Precision Engineering Division: 1997-2001

January 1, 1998
Author(s)
Dennis A. Swyt, Howard H. Harary, Michael T. Postek, Richard M. Silver, Theodore V. Vorburger
This report, based on U.S. industry roadmaps and related National Institute of Standards and Technology studies, is a product of the process of strategic planning for the NIST Precision Engineering Division (PED) and presents the major technological trends

Testing Displacement-Measuring Interferometer Systems

January 1, 1998
Author(s)
Jack A. Stone Jr., Martin Schroeck, Michael T. Stocker
We have made a study of one method for testing displacement-measuring interferometer systems, a modified back-to-back comparison, that automatically compensates for changes in the optical path length between the two interferometers. Although this method

The DOE2000 Materials MicroCharacterization Collaboratory

January 1, 1998
Author(s)
E Voelkl, K Alexander, J Mabon, M O'Keefe, Michael T. Postek, M Wright, N J. Zaluzec
The Materials Microcharacterization Collaboratory (MMC) was created last year as a pilot project within the U.S. Department of Energy''s DOE2000 program. The DOE2000 program has, as its main goals, to develop improved capabilities for solving DOE''s

The Role of Space Charge in Scanned Probe Oxidation

January 1, 1998
Author(s)
John A. Dagata
The growth rate and electrical character of nanostructures produced by scanned probe oxidation are investigated by integrating an in-situ electrical force characterization technique, scanning Maxwell-stress microscopy, into the fabrication process

The Study of Silicon Stepped Surfaces as Atomic Force Microscope Calibration Standards With a Calibrated AFM at NIST

January 1, 1998
Author(s)
V W. Tsai, Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, R Koning, Richard M. Silver, E. C. Williams
Due to the limitations of modern manufacturing technology, there is no commercial height artifact at the sub-nanometer scale currently available. The single-atom steps on a cleaned silicon (111) surface with a height of 0.314 nm, derived from the lattice

Understanding Scanned Probe Oxidation of Silicon

January 1, 1998
Author(s)
John A. Dagata, T Inoue, J Itoh, H Yokoyama
A model for scanned probe microscope (SPM) silicon oxidation is presented. The model was derived from a consideration of the space-charge dependence of this solid-state reaction as a function of substrate doping type/level and has been verified

Vibration of a Room-Sized Airspring-Supported Slab

January 1, 1998
Author(s)
H Amick, B Sennewald, N C. Pardue, E C. Teague, Brian R. Scace
This paper reports the results of the finite element analysis and in situ testing of a large-scale (4 m x 10 m) pneumatically isolated concrete slab. The slab was constructed as a design prototype for next-generation metrology laboratories at the National

Voltage Modulation Scanned Probe Oxidation (Abstract)

January 1, 1998
Author(s)
John A. Dagata, T Inoue, J Itoh, K Matsumoto, H Yokoyama
This talk describes methods for enhancing the growth rate and electrical characteristics of nanostructures produced on silicon and titanium substrates by scanned probe microscope (SPM) oxidation. Direct oxidation of a substrate by the intense electric

Application of Transmission Electron Detection to SCALPEL Mask Metrology

November 1, 1997
Author(s)
R Farrow, Michael T. Postek, William J. Keery, Samuel N. Jones, J R. Lowney, M Blakey, L Fetter, J Griffith, J E. Liddle, L C. Hopkins, H A. Huggins, M Peabody, A Novembre
Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the transmitted electron signal in a modified scanning electron microscope. Features as small as 0

Application of Trasmission Electron Detection to Scalpel Mask Metrology

November 1, 1997
Author(s)
R Farrow, Michael T. Postek, William J. Keery, Samuel N. Jones, J R. Lowney, M Blakey, L Fetter, A Liddle, L C. Hopkins, H A. Huggins, M Peabody, A Novembre, J Griffith
Linewidth measurements were performed on a 4X scattering with angular limitation in projection electron lithography (SCALPEL) e-beam lithography mask using the transmitted electron signal in a modified scanning electron microscope. Features as small as 0

Applications of the Rapidly Renewable Lap

November 1, 1997
Author(s)
R E. Parks, E Robert, Christopher J. Evans, David J. Roderick, J David, John A. Dagata
The rapidly renewable lap is based on the simple concept of generating the figure needed in a lap substrate and then replicating it into a thin film slumped over the substrate. Based on this concept, we describe how efficient laps can be constructed for

Measurements of the LIGO Pathfinder Optics

November 1, 1997
Author(s)
R E. Parks, Christopher J. Evans, P Sullivan, Lianzhen Shao, B Loucks
A number of 150 mm apertures in 250 mm diameter plano-concave optics with figure errors of a few nm were carefully tested using phase measuring interferometry and the data reduced using pixel based absolute testing techniques. We discuss some of the data

Metrology of Scattering with Angular Limitation Projection Electron Lithography Masks

November 1, 1997
Author(s)
J E. Liddle, M Blakey, T Saunders, R Farrow, L Fetter, C Kneurek, R Kasica, et al, M Peabody, Shannon L. Takach, D L. Windt, Michael T. Postek
Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of the mask to the system error budget is within acceptable limits. For design rules of 0.13 ?m and

Uncertainty and Dimensional Calibrations

November 1, 1997
Author(s)
Theodore D. Doiron, John R. Stoup
The calculation of uncertainty for a measurement is an effort to set reasonable bounds for the measurement result according to standardized rules. Since every measurement produces only an estimate of the answer, the primary requisite of an uncertainty

Conformal Oxides on Si Surfaces

September 15, 1997
Author(s)
V W. Tsai, S. Wang, E. C. Williams, J Schneir, Ronald G. Dixson
The characteristics of the Si-vacuum interface were compared with the characteristics of the oxide-air interface formed following room temperature oxidation for a variety of samples. Scanning tunneling microscopy was used to measure the surface structure
Displaying 2401 - 2425 of 2724
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