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Displaying 2326 - 2350 of 2717

Experimental Study of the NaK (3 1PI) State

February 1, 1999
Author(s)
E Laub, J Huennekens, R K. Namiotka, Zeina J. Kubarych, I Prodan, J La civita, S Webb, I Mazsa
We report the results of an optical-optical double resonance experiment to determine the NaK (3 1PI) state potential energy curve. In the first step, a narrow band cw laser (PUMP) is tuned to line center of a particular 2(A) (1 SIGMA+)(v?, J?) 1(X) (1

A Constrained Monte Carlo Simulation Method for the Calculation of CMM Measurement Uncertainty

January 1, 1999
Author(s)
Steven D. Phillips, Bruce R. Borchardt, Daniel S. Sawyer, William T. Estler, K Eberhardt, M Levenson, Marjorie A. McClain, Ted Hopp
We describe a Monte Carlo simulation technique where known information about a metrology system is employed as a constraint to distinguish the errors associated with the instrument under consideration from the set of all possible instrument errors. The

Algorithms for Calculating Single-Atom Step Heights

January 1, 1999
Author(s)
Joseph Fu, V W. Tsai, R Koning, Ronald G. Dixson, Theodore V. Vorburger
Recently, measuring Si(111) single atomic steps prompted us to investigate the measuring technique. The section technique is the most popular method for measuring the height. By measuring a simulated Si(111) atomic step, we have found it could have an

Diode Lasers in Length Metrology: Application to Absolute Distance Interferometry

January 1, 1999
Author(s)
Jack A. Stone Jr., Lowell P. Howard, Alois Stejskal
Diode lasers are becoming increasingly important in length metrology. In particular, the tunability of diode lasers makes them attractive for applications such as absolute distance interferometry (ADI). In this paper we describe the current status of our

Measurement Uncertainty and Noise in Nanometrology

January 1, 1999
Author(s)
James E. Potzick
The measurement of feature sizes on integrated circuit photomasks and wafers is an economically important and technically challenging application of nanometrology. The displacement measuring laser heterodyne interferometer is a popular tool in such

Measurement Uncertainty and Uncorrected Bias

January 1, 1999
Author(s)
Steven D. Phillips, K Eberhardt, William T. Estler
This paper discusses the distinction between measurement uncertainty, measurement errors and their role in the calibration process. The issue of including uncorrected bias is addressed and a method to extend the current ISO Guide to the Expression of

Physics Laboratory Technical Activities 1998

January 1, 1999
Author(s)
K B. Gebbie
This report summarizes research projects measurement method developments, calibration and testing services, and data evaluation activities that were carried out during calendar year 1998 in the NIST Physics Laboratory. These activities are in the areas of

Radiationless Resonant Raman Scattering at the Ar K Edge

January 1, 1999
Author(s)
Thomas W. LeBrun, S H. Southworth, G B. Armen, M A. MacDonald, Y Azuma
Partial cross sections for Ar K-LZL3(1 D2)np, n=4 and 5 spectator Auger states excited by x-ray absorption across the K-edge were measured and compared with calculations based on the theory or radiationless resonant Raman scattering. Core relaxation and

Sources of Error in Absolute Distance Interferometry

January 1, 1999
Author(s)
Jack A. Stone Jr., Alois Stejskal, Lowell P. Howard
In this paper we describe the status of our research on the use of diode lasers for absolute distance interferometry, and we discuss the major sources of uncertainty that limit the accuracy of this technique for distance measurement. We have primarily

Telepresence: A New Paradigm for Solving Contamination Problems

January 1, 1999
Author(s)
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
When a contamination event occurs in a semiconductor fab, a process engineer must act quickly to find the cause. It is cost-prohibitive to maintain a full complement of analytical tools in a fab that would be necessary to identify very small particles and

Telepresence: A New Paradigm for Solving Contamination Problems

January 1, 1999
Author(s)
Michael T. Postek, Marylyn H. Bennett, N J. Zaluzec
When a contamination event occurs in a semiconductor fab, a process engineer must act quickly to find the cause. It is cost-prohibitive to maintain a full compliment of analytical tools in a fab that would be necessary to identify very small particles and

Tip Characterization for Dimensional Nanometrology

January 1, 1999
Author(s)
John S. Villarrubia
Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imaging artifacts. This

Accuracy Differences Among Photomask Metrology Tools and Why They Matter

December 1, 1998
Author(s)
James E. Potzick
A variety of different kinds of photomask critical dimensions (CD) metrology tools are available today to help meet current and future metrology challenges. These tools are based on different operating principles, and have different cost, throughput

Calculation of Measurement Uncertainty Using Prior Information

November 1, 1998
Author(s)
Steven D. Phillips, William T. Estler
We describe the use of Bayesian inference to include prior information about the value of the measurand in the calculation of measurement uncertainty. Typical examples show this can, in effect, reduce the expanded uncertainty by up to 85 %. The application

NIST Microform Calibration - How Does It Benefit U.S. Industry?

October 1, 1998
Author(s)
Jun-Feng Song, Theodore V. Vorburger
In microform metrology, complex 3-D surface features in the micrometer range must be quantified for their space and size including dimensions, curves, angles, profile deviations, and alignment errors, as well as surface roughness with measurement

NIST Virtual/Physical Random Profile Roughness Calibration Standards

October 1, 1998
Author(s)
Jun-Feng Song, Christopher J. Evans, Michael L. McGlauflin, Eric P. Whitenton, Theodore V. Vorburger, Y B. Yuan
The NIST (National Institute of Standards and Technology) virtual/physical surface roughness calibration standard consists of physical specimens whose surfaces are manufactured by a numerically controlled diamond-turning process using digitized profiles
Displaying 2326 - 2350 of 2717
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