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Search Publications

NIST Authors in Bold

Displaying 2001 - 2025 of 2717

Scattering by a Sphere with a Dielectric Half-Space or on Another Sphere

January 1, 2004
Author(s)
Egon Marx
Particle contamination of dielectric or conducting surfaces can be detected by shining light on the surface and looking for abnormal scattering distributions. This procedure can be simulated by computing the scattering distribution for a dielectric sphere

Shape-Sensitive Linewidth Measurements of Resist Structures

January 1, 2004
Author(s)
John S. Villarrubia, Andras Vladar, Michael T. Postek
Widths of developed 193 nm resist lines were measured by two methods and compared. One method was a new model-based library method. In this method the scanning electron microscope (SEM) images corresponding to various edge shapes are simulated in advance

Tip Characterization for Dimensional Nanometrology

January 1, 2004
Author(s)
John S. Villarrubia
Abstract: Technological trends are increasingly requiring dimensional metrology at size scales below a micrometer. Scanning probe microscopy has unique advantages in this size regime, but width and roughness measurements must be corrected for imaging

Uncertainty Due to Finite Resolution Measurements

January 1, 2004
Author(s)
Steven D. Phillips, B Tolman, William T. Estler
We investigate the influence of finite resolution on measurement uncertainty from a perspective of the Guide to the Expression of Uncertainty in Measurement (GUM). Finite resolution in the presence of Gaussian noise yields a distribution of results that

Virtual Surface Calibration Database

January 1, 2004
Author(s)
Thomas B. Renegar, Theodore V. Vorburger, Son H. Bui
This paper presents the development of a virtual surface calibration database for parameter evaluation and algorithm verification. The database runs from a web site at the National Institute of Standards and Technology (NIST), USA. Companies, universities

Angle Metrology Using AAMACS and Two Small-Angle Measurement Systems

November 28, 2003
Author(s)
Jack A. Stone Jr., M Amer, Bryon S. Faust, Jay H. Zimmerman
The highest accuracy method for angle measurement employed at NIST(National Institute of Standards and Technology) makes use of an automated stack of three indexing tables-- our Advanced Automated Master Angle Calibration System (AAMACS)-- in conjunction

Wavelength-Tracking Capabilities of a Fabry-Perot Cavity

November 20, 2003
Author(s)
Jack A. Stone Jr., Alois Stejskal
We have characterized the accuracy of atmospheric wavelength tracking based on a laser servolocked to a simple Fabry-Peron cavity. The motivations are (1) to explore a method for air refractive index measurement and (2) to determine the stability and

Exploring and Extending the Limits of CD-SEMs' Resolution

November 1, 2003
Author(s)
Andras Vladar, Michael T. Postek, John S. Villarrubia
This study of SEM resolution is occasioned by concerns that it is no longer adequate for lithography process control in integrated circuit manufacturing. For example, according to the most recent International Technology Roadmap for Semiconductors, the in

Optical Photomask CD Metrology at NIST

November 1, 2003
Author(s)
James E. Potzick
Our customers usually measure mask features in order to make a business decision, such as whether or not to ship a mask to a customer. A simple cost/benefit model for mask CD metrology shows there is an optimum measurement uncertainty which will maximize

The Advanced Angle Metrology System at NIST

November 1, 2003
Author(s)
Jack A. Stone Jr.
At the National Institute of Standards and Technology, our best capability for angle measurement is our Advanced Automated Master Angle Calibration System (AAMACS). This instrument is based on a triple-stack of indexing tables, used in conjunction with

Space-Scale Analysis of Line Edge Roughness on 193 nm Lithography Test Structures

October 1, 2003
Author(s)
Ndubuisi G. Orji, Jayaraman Raja, Theodore V. Vorburger, Xiaohong Gu
Line edge roughness (LER) is a potential showstopper for the semiconductor industry. As the width of patterned line structures decreases, LER is becoming a non-negligible contributor to resist critical dimension (CD) variation. The International Technology

Influence of analysis Algorithms on the Value of Distorted Step Height Data

September 1, 2003
Author(s)
Ndubuisi G. Orji, Jayaraman Raja, Son H. Bui, Theodore V. Vorburger
One of the most important aspects of step height evaluation are the analysis algorithms used. There algorithms assume that the profiles and images being analyzed are ideal, but real step profiles are not ideal and the analysis algorithms can influence the

Measurement of Gate-Oxide Film Thickness by X-ray Photoelectron Spectroscopy

September 1, 2003
Author(s)
Cedric J. Powell, Aleksander Jablonski
X-Ray Photoelectron Spectroscopy (XPS) is being used to an increasing extent for the characterization of new gate-oxide materials, particularly for the determination of film composition, uniformity, and thickness. A key parameter for film-thickness

Temperature Metrology and Its Impact on Industry

September 1, 2003
Author(s)
Hratch G. Semerjian, Ellyn S. Beary
Temperature measurement represents one of the most frequently and broadly used measurements, with a majority of products manufactured having temperature measurement devices as an esential component. The accuracy and precision of these temperature

An Approach to Predicting the Location of Moving Objects During On-Road Navigation

August 15, 2003
Author(s)
Craig I. Schlenoff, Rajmohan Madhavan, Stephen B. Balakirsky
For an autonomous vehicle to navigate in real-time within a dynamic environment, it must be able to respond to moving objects. In particular, it must be able to predict, with appropriate levels of confidence, where those objects are expected to be at times

CD-SEM Measurement of Line Edge Roughness Test Patterns for 193 nm Lithography

July 1, 2003
Author(s)
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)

CD-SEM Measurement of Line-Edge Roughness Test Patterns for 193-nm Lithography

July 1, 2003
Author(s)
B Bunday, M R. Bishop, John S. Villarrubia, Andras Vladar
The measurement of line-edge roughness (LER) has recently become a major topic of concern in the litho-metrology community and the semiconductor industry as a whole, as addressed in the 2001 International Technology Roadmap for Semiconductors (ITRS)
Displaying 2001 - 2025 of 2717
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