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Displaying 1726 - 1750 of 2737

Scatterfield Optical Imaging for sub-10 nm Dimensional Metrology

January 1, 2009
Author(s)
Richard M. Silver
Recent developments in optical microscopy promise to advance optical metrology and imaging to unprecedented levels through theoretical and experimental development of a new measurement technique called "scatterfield optical imaging". ". Current metrology

Design and testing of a software feedback loop for RF power leveling

December 12, 2008
Author(s)
Xiaohai Cui, Thomas P. Crowley
We have developed a software feedback loop that stabilizes the RF power input in calorimetric measurements to better than 30 ppm. In this system, a bolometric sensor with a Type IV power meter is used to detect the power. Feedback is provided to the AM

Wideband measurement of extreme impedance with a multistate reflectometer

December 12, 2008
Author(s)
Arkadiusz C. Lewandowski, Denis X. LeGolvan, Ronald A. Ginley, Thomas M. Wallis, Atif A. Imtiaz, Pavel Kabos
Abstract: We present a technique for accurate wideband measurements of one-port devices with extreme impedances. Our technique uses a reflectometer with variable parameters (states) to obtain redundant measurements of the extreme impedance device. We

2nd Annual Tri-National Workshop on Standards for Nanotechnology - (NIST presentations)

December 10, 2008
Author(s)
Ronald G. Dixson, Jon R. Pratt, Vincent A. Hackley, James E. Potzick, Richard A. Allen, Ndubuisi G. Orji, Michael T. Postek, Herbert S. Bennett, Theodore V. Vorburger, Jeffrey A. Fagan, Robert L. Watters
A new era of cooperation between North American National Measurement Institutes (NMIs) was ushered by the National Research Council of Canada Institute for National Measurement Standards (NRC-INMS) on February 7, 2007 when the first Tri-National workshop

Blind estimation of general tip shape in AFM imaging

December 1, 2008
Author(s)
Fenglei Tian, Xiaoping Qian, John S. Villarrubia
The use of flared tip and bi-directional servo control in some recent atomic force microscopes (AFM) has made it possible for these advanced AFMs to image structures of general shapes with undercuts and reentrant surfaces. Since AFM images are distorted

Computational Parameters in Simulation of Microscope Images

November 28, 2008
Author(s)
Egon Marx, James E. Potzick
The simulation of microscope images computed from scattered fields determined using integral equations depend on a number of parameters that are not related to the scatterer or to the microscope but are choices made for the computation method. The effect

Integral Equations for 3-D Scattering: Finite Strip on a Substrate

November 28, 2008
Author(s)
Egon Marx
Singular integral equations that determine the exact fields scattered by a dielectric or conducting finite strip on a substrate are presented. The computation of the image of such a scatterer from these fields by Fourier optics methods is also shown.

Neutron Transmission of Single-Crystal Magnesium Fluoride

November 27, 2008
Author(s)
John Barker, David F. Mildner, Jose Rodriguez Rivera, P. Thiyagarajan
The neutron attenuation through single-crystal magnesium fluoride has been measured as a function of wavelength at both room temperature and 77 K. These data confirm a total cross section that is lower than MgO for wavelengths greater than 0.2 nm. MgF 2

Calibration of a Computer Assisted Orthopedic Hip Surgery Phantom

November 4, 2008
Author(s)
Daniel S. Sawyer, Nicholas G. Dagalakis, Craig M. Shakarji, Yong Sik Kim
Orthopedic surgeons have identified a need for calibration artifacts (phantoms) to establish the traceability (to the SI unit of length) of measurements performed with Computer Assisted Orthopedic Surgery (CAOS) systems. These phantoms must be lightweight

A COMPACT, COMPOUND ACTUATOR FOR THE MOLECULAR MEASURING MACHINE

October 19, 2008
Author(s)
Jing Li, Yin-Lin Shen, Jaehwa Jeong, Fredric Scire, John A. Kramar
A compact, two-stage, vertical actuator with built-in sensors has been developed for the Molecular Measuring Machine (M3) and other potential precision instrumentation applications, such as scanning probe microscopy (SPM). In this article, we describe the

Error Motions of a Non-orthogonal Rotary Axis

October 19, 2008
Author(s)
Michael L. McGlauflin, Shawn P. Moylan
Error-motions of rotating axes are one of many sources of imprecision in machining. Accurate determination of axis of rotation error motions of the rotary axes has a direct influence on the accuracy of the finished part. International and U.S. national

International photomask linewidth comparison by NIST and PTB

October 17, 2008
Author(s)
James E. Potzick, Ronald G. Dixson, Richard Quintanilha, Michael T. Stocker, Andras Vladar, Egbert Buhr, Bernd Bodermann, Wolfgang Hassler-Grohne, Harald Bosse, C.G. Frase
In preparation of the international Nano1 linewidth comparison on photomasks between 8 national metrology institutes, NIST and PTB have started a bilateral linewidth comparison in 2008, independent of and prior to the Nano1 comparison in order to test the

Using uncalibrated lasers as wavelength standards

October 1, 2008
Author(s)
Jack A. Stone Jr.
The fundamental atomic physics of a gas laser transition is such that the transition frequency, or equivalently, the vacuum wavelength of the laser, cannot vary from its central value by more than a few parts in 106. The uncertainty of the gas laser

Performance Evaluation of Laser Trackers

September 15, 2008
Author(s)
Balasubramanian Muralikrishnan, Daniel S. Sawyer, Christopher J. Blackburn, Steven D. Phillips, Bruce R. Borchardt, William T. Estler
The American Society for Mechanical Engineers (ASME) recently released the ASME B89.4.19 Standard [1] on performance evaluation of spherical coordinate instruments such as laser trackers. At the National Institute of Standards and Technology (NIST), we can

Accuracy Considerations for Critical Dimension Semiconductor Metrology

September 9, 2008
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, B Bunday, J Allgair
As the size of integrated circuit features continues to decrease, the accuracy of measurements becomes more important. Due to greater emphasis on precision rather than accuracy, many of the measurements made in semiconductor fabs are not traceable to the

Through-focus Scanning and Scatterfield Optical Methods for Advanced Overlay Target Analysis

September 1, 2008
Author(s)
Ravikiran Attota, Michael T. Stocker, Richard M. Silver, Nathanael A. Heckert, Hui Zhou, Richard J. Kasica, Lei Chen, Ronald G. Dixson, Ndubuisi G. Orji, Bryan M. Barnes, Peter Lipscomb
In this paper we present overlay measurement techniques that use small overlay targets for advanced semiconductor applications. We employ two different optical methods to measure overlay using modified conventional optical microscope platforms. They are
Displaying 1726 - 1750 of 2737
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