January 1, 2000
      
                  
        
  Author(s)
  J H. Scott,   Eric S. Windsor
 
       
            
    
    
        The structure of ultrathin silicon oxynitride films, used as gate dielectrics in integrated circuits (ICs), is studied using analytical electron microscopy (AEM). Laterally homogeneous blanket films approximately 2nm in thickness are characterized in cross