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Search Publications

NIST Authors in Bold

Displaying 10626 - 10650 of 73893

A Method-Level Test Generation Framework for Debugging Big Data Applications

January 24, 2019
Author(s)
Raghu N. Kacker, David R. Kuhn, Huadong Feng, Yu J. Lei
Big data applications are now widely used to process massive amounts of data we create every day. When a failure occurs in a big data application, debugging at the system-level input can be expensive due to the large amount of data being processed. This

Progress Towards Standards for Quantitative MRI (qMRI) and Outstanding Needs

January 24, 2019
Author(s)
Kathryn E. Keenan, Joshua R. Biller, Michael A. Boss, Adele P. Peskin, Karl F. Stupic, Stephen E. Russek, Jana Delfino, Mark Does, Jeffrey L. Evelhoch, Mark Griswold, Jeffrey Gunter, R Scott Hinks, Stuart Hoffman, Geena Kim, Riccardo Lattanzi, Xiaojuan Li, Luca Marinelli, Pratik Mukherjee, Robert J. Nordstrom, Elena Perez, Berkman Sahiner, Natalie J. Serkova, Amita Shukla-Dave, Michael Steckner, Lisa J. Wilmes, Holden Wu, Huiming Zhang, Edward F. Jackson, Daniel Sullivan
The National Institute of Standards and Technology (NIST) MRI Standards project held a one-day workshop on August 4, 2017 on campus in Boulder, CO. The goal of the workshop was to evaluate the advances in quantitative MRI (qMRI) since the last NIST

Trapped Ion Quantum Information Processing with Squeezed Phonons

January 24, 2019
Author(s)
Wenchao Ge, Brian Sawyer, Joseph W. Britton, Kurt Jacobs, John Bollinger, Michael Foss-Feig
Trapped ions offer a pristine platform for quantum computation and simulation, but improving their coherence remains a crucial challenge. Here, we propose and analyze a new strategy to enhance the coherent interactions in trapped-ion systems via parametric

Mechanosensitive ion permeation across sub-nanoporous MoS2 monolayers

January 23, 2019
Author(s)
Alta Y. Fang, Kenneth Kroenlein, Alexander Smolyanitsky
We use all-atom molecular dynamics simulations informed by density functional theory calculations to investigate aqueous ion transport across subnanoporous monolayer molybdenum disulfide (MoS2) membranes subject to varying tensile strains. Driven by a

Impedance tuning with photoconductors to 40 GHz

January 22, 2019
Author(s)
Jasper A. Drisko, Ari D. Feldman, Franklyn J. Quinlan, James C. Booth, Nathan D. Orloff, Christian J. Long
Light has been widely used to control a variety of microwave devices, including switches, antennas, and detectors. Here, we present a photoconductive device integrated into a coplanar waveguide to tune complex impedances at microwave frequencies with

Chip-integrated visible-telecom entangled photon pair source for quantum communication

January 21, 2019
Author(s)
Xiyuan Lu, Qing Li, Daron Westly, Gregory Moille, Anshuman Singh, Vikas Anant, Kartik Srinivasan
Photon pair sources are fundamental blocks for quantum entanglement and quantum communication. Recent studies in silicon photonics have documented promising characteristics for photon pair sources within the telecommunications band, including sub-milliwatt

Machine Learning techniques for state recognition and auto-tuning in quantum dots

January 20, 2019
Author(s)
Sandesh Kalantre, Justyna Zwolak, Stephen Ragole, Xingyao Wu, Neil M. Zimmerman, Michael Stewart, Jacob Taylor
Recent progress in building large-scale quantum devices for exploring quantum computing and simulation paradigms has relied upon effective tools for achieving and maintaining good experimental parameters, i.e. tuning up devices. In many cases, including in

Compositional Models for Complex Systems

January 19, 2019
Author(s)
Spencer J. Breiner, Ram D. Sriram, Eswaran Subrahmanian
In this chapter we argue for the use of representations from category theory to support better models for complex systems, and provide an example of such an application might look like. Our approach rests on the well known observation that complex system

Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias

January 18, 2019
Author(s)
Trevor Braun, Daniel Josell, Manoj R. Silva, Thomas P. Moffat
This work examines Cu deposition in low chloride, suppressor containing electrolytes that exhibit a transition from passive to active deposition partway down filling features based on the coupling of suppression breakdown and surface topography. The

Ni 2 Mo 3 O 8 : Complex Antiferromagnetic Order on a Honeycomb Lattice

January 18, 2019
Author(s)
Jennifer R. Morey, Allen Scheie, John P. Sheckelton, Craig Brown, Tyrel M. McQueen
Theoretical studies have predicted the existence of topological magnons in honeycomb compounds with zig-zag antiferromagnetic (AFM) order. Here we report this discovery of zig-zag AFM order in the layered and non-centrosymmetric honeycomb nickelate Ni 2Mo

An Ultra-fast Multi-level MoTe2-based RRAM

January 17, 2019
Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the

A User Application-Based Access Point Selection Algorithm for Dense WLANs

January 16, 2019
Author(s)
Munsuk Kim, Ye Na Kim, Sukyoung Lee, Nada T. Golmie, SeungSeob Lee
The current commercial access point (AP) selection schemes are mostly based on signal strength, but perform poorly in many situations because they ignore the actual load distributions among the APs. To address this shortcoming, a number of alternative

Higher Order Effects in Organic LEDs with Sub-bandgap Turn-on

January 16, 2019
Author(s)
Sebastian Engmann, Adam J. Barito, Emily Bittle, Chris Giebink, Lee J. Richter, David J. Gundlach
Spin-dependent nonlinear processes in organic materials such as singlet-fission and triplet- triplet annihilation could increase the performance for photovoltaics, detectors, and light emitting diodes. Rubrene/C60 light emitting diodes exhibit a distinct

Quantum algorithm for simulating the wave equation

January 15, 2019
Author(s)
Pedro C. Costa, Stephen P. Jordan, Aaron Ostrander
We present a quantum algorithm for simulating the wave equation under Dirichlet and Neumann boundary conditions. The algorithm uses Hamiltonian simulation and quantum linear system algorithms as subroutines. It relies on factorizations of discretized

High-Pressure Synthesis of A 2 NiO 2 Ag 2 Se 2 (A=Sr, Ba) with a High-Spin Ni 2+ in Square-Planar Coordination

January 14, 2019
Author(s)
Yuki Matsumoto, Takafumi Yamamoto, Kousuke Nakano, Hiroshi Takatsu, Taito Murakami, Kenta Hongo, Ryo Maezono, Hiraku Ogino, Dongjoon Song, Craig Brown, Tassel Cedric, Hiroshi Kageyama
Square-planar coordinate Ni 2+ ions in oxides are exclusively limited to a low spin state (S = 0) owing to extensive crystal field splitting. Here we report layered oxychalcogenides A 2NiO 2Ag 2Se 2 (A = Sr, Ba) with the S = 1 NiO 2 square lattice. The

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

January 14, 2019
Author(s)
Duane J. McCrory, Mark Anders, Jason Ryan, Pragya Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason Campbell
We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows

Bottom-up Copper Filling of Millimeter Size Through Silicon Vias

January 12, 2019
Author(s)
Daniel Josell, Thomas P. Moffat, Lyle Menk, Andrew Hollowell, M Blain
This work demonstrates void-free Cu filling of millimeter size Through Silicon Vias (mm-TSV) in an acid copper sulfate electrolyte using a combination of a polyoxamine suppressor and chloride, analogous to previous work filling TSV that were an order of

In-situ Stress Measurements During Cobalt Electrodeposition

January 12, 2019
Author(s)
Gery R. Stafford, Ugo Bertocci
In situ cantilever curvature is used to quantify the growth stress in Co thin films, electrodeposited from an electrolyte consisting of 0.5 mol/L Na2SO4, 0.5 mol/L H3BO3, and 0.1 mol/L CoSO4 . 7 H20. The average biaxial steady-state stress is measured as a

A Pre-Evacuation Database for Use in Egress Simulations

January 11, 2019
Author(s)
Ruggiero Lovreglio, Erica D. Kuligowski, Steve Gwynne, Karen E. Boyce
Quantifying the pre-evacuation time; i.e., the time between first awareness and deliberate evacuation movement, is a key task for evacuation model users and fire safety engineers. The identification and employment of pre-evacuation data given an incident
Displaying 10626 - 10650 of 73893
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